Albert Davydov
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In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
Spontaneously grown GaN and AlGaN nanowires
KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov
Journal of Crystal Growth 287 (2), 522-527, 2006
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank
Applied Physics Letters 87, 192903, 2005
The 2019 materials by design roadmap
K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
Catalyst-free growth of GaN nanowires
KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ...
Journal of electronic materials 35 (4), 576-580, 2006
GaN nanowires grown by molecular beam epitaxy
KA Bertness, NA Sanford, AV Davydov
Selected Topics in Quantum Electronics, IEEE Journal of, 1-12, 2011
Electric-field induced structural transition in vertical MoTe 2-and Mo 1–x W x Te 2-based resistive memories
F Zhang, H Zhang, S Krylyuk, CA Milligan, Y Zhu, DY Zemlyanov, ...
Nature materials 18 (1), 55-61, 2019
Electrolyte stability determines scaling limits for solid-state 3D Li ion batteries
D Ruzmetov, VP Oleshko, PM Haney, HJ Lezec, K Karki, KH Baloch, ...
Nano letters 12 (1), 505-511, 2012
Diameter dependent transport properties of gallium nitride nanowire field effect transistors
A Motayed, M Vaudin, AV Davydov, J Melngailis, M He, SN Mohammad
Applied physics letters 90 (4), 043104, 2007
Thermodynamics and phase stability in the Ga–N system
J Unland, B Onderka, A Davydov, R Schmid-Fetzer
Journal of Crystal Growth 256 (1-2), 33-51, 2003
Refractive index study of AlxGa1-xN films grown on sapphire substrates
NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ...
Journal of applied physics 94 (5), 2980-2991, 2003
Tapering control of Si nanowires grown from SiCl4 at reduced pressure
S Krylyuk, AV Davydov, I Levin
ACS nano, 2011
Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition
A Motayed, AV Davydov, MD Vaudin, I Levin, J Melngailis, ...
Journal of applied physics 100, 024306, 2006
Immobilization of streptavidin on 4H–SiC for biosensor development
EH Williams, AV Davydov, A Motayed, SG Sundaresan, P Bocchini, ...
Applied surface science 258 (16), 6056-6063, 2012
Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation
RA Bernal, R Agrawal, B Peng, KA Bertness, NA Sanford, AV Davydov, ...
Nano letters, 2011
Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering
R Beams, LG Canšado, S Krylyuk, I Kalish, B Kalanyan, AK Singh, ...
ACS nano 10 (10), 9626-9636, 2016
Ultimate bending strength of Si nanowires
G Stan, S Krylyuk, AV Davydov, I Levin, RF Cook
Nano letters 12 (5), 2599-2604, 2012
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ...
Journal of Applied Physics 110 (5), 053506, 2011
Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
GS Aluri, A Motayed, AV Davydov, VP Oleshko, KA Bertness, NA Sanford, ...
Nanotechnology 22, 295503, 2011
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Articles 1–20