Andrii Naumov

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Belyaev A.E.Institute of semiconductor physicsVerified email at isp.kiev.ua
Vasyl P. Kladko, V.P. Klad'ko, V. Kladk...Corresponding Member of NAS of Ukraine, Professor, Institute of Semiconductors Physics NAS ofVerified email at isp.kiev.ua
Hilde Hardtdegengroup leader Ernst Ruska Centre, Forschungszentrum Jülich GmbHVerified email at fz-juelich.de
Zahia BougriouaCNRSVerified email at univ-lille.fr
Volodymyr SheremetVirginia Commonwealth UniversityVerified email at vcu.edu
Andrian V. Kuchuk, А.В. Кучук, А. Кучу...Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USAVerified email at uark.edu
Vyacheslav KochelapProfessor of Theoretical Physics, Institute of Semiconductor Physics, National Academy of SciencesVerified email at isp.kiev.ua
Vadym KorotyeyevUkraineVerified email at ftmc.lt
Viktor Strelchuk; V.V.Strelchuk; V.V.Str...Head of Laboratory; V. E. Lashkaryov Institute of Semiconductor Physics, National Academy ofVerified email at isp.kiev.ua
Олександр Коломис; O.F. Kolomys; A....Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН УкраїниVerified email at isp.kiev.ua
Maciej ChrobakAGH University of Science and Technology, Faculty of Physics and Applied Com- puter ScienceVerified email at agh.edu.pl
Marcin SikoraPACS & ACMiN, AGH University, KrakówVerified email at agh.edu.pl
Laurence EavesUniversity of NottinghamVerified email at nottingham.ac.uk
Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk
Gregory SalamoProfessor of Physics, University of ArkansasVerified email at uark.edu
Morgan E. WareUniversity of ArkansasVerified email at uark.edu
Nadiia Safriuk-RomanenkoV.E.Lashkaryov Institute of semiconductor physics NAS of UkraineVerified email at isp.kiev.ua
Yuriy I. MazurInstitute for Nanoscience and Engineering, University of ArkansasVerified email at uark.edu
Serhii KryvyiResearch Associate, Institute for Nanoscience and Engineering, University of ArkansasVerified email at uark.edu
Hryhorii StanchuPhDVerified email at uark.edu

Andrii Naumov

AGH University of Science and Technology

Verified email at agh.edu.pl - Homepage

topological materials nanostructures electronic transport semiconductor physics


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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of Applied Physics 105 (7), 073703, 2009	49	2009
AlGaN/GaN high electron mobility transistor structures: self-heating effect and performance degradation SA Vitusevich, AM Kurakin, N Klein, MV Petrychuk, AV Naumov, ... IEEE transactions on device and materials reliability 8 (3), 543-548, 2008	37	2008
Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes AM Kurakin, SA Vitusevich, SV Danylyuk, AV Naumov, CT Foxon, ... physica status solidi c 3 (6), 2265-2269, 2006	18	2006
Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons VA Sydoruk, I Zadorozhnyi, H Hardtdegen, H Lüth, MV Petrychuk, ... Nanotechnology 28 (13), 135204, 2017	12	2017
Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire VP Klad’ko, SV Chornen’kii, AV Naumov, AV Komarov, M Tacano, ... Semiconductors 40, 1060-1065, 2006	12	2006
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions AE Belyaev, CT Foxon, SV Novikov, O Makarovsky, L Eaves, MJ Kappers, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2004	12	2004
Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures V Kladko, A Kuchuk, А Naumov, N Safriuk, O Kolomys, S Kryvyi, ... Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016	11	2016
Heat hunting in a freezer: Direct measurement of quasiparticle diffusion in superconducting nanowire M Zgirski, M Foltyn, A Savin, A Naumov, K Norowski Physical Review Applied 14 (4), 044024, 2020	9	2020
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ... physica status solidi c 10 (3), 498-500, 2013	8	2013
AV Ko marov, M. Tacano, Yu. N. Sveshnikov, SA Vitusevich, and AE Belyaev VP Kladko, SV Chornenkii, AV Naumov Fiz. Tekh. Poluprovodn 40, 1087, 2006	6	2006
Influence of Doping on the Topological Surface States of Crystalline Bi₂Se₃ Topological Insulators K Nowak, M Jurczyszyn, M Chrobak, K Maćkosz, A Naumov, N Olszowska, ... Materials 15 (6), 2083, 2022	5	2022
Nature of low-energy optical emission in doped AlGaN∕ GaN heterostructures AE Belyaev, AV Naumov, GG Tarasov, AV Komarov, M Tacano, ... Journal of applied physics 101 (3), 2007	5	2007
Electric current and noise in long GaN nanowires in the space-charge limited transport regime VA Sydoruk, SA Vitusevich, H Hardtdegen, MV Petrychuk, AV Naumov, ... Fluctuation and noise letters 16 (01), 1750010, 2017	3	2017
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization AV Naumov, OF Kolomys, AS Romanyuk, BI Tsykaniuk, VV Strelchuk, ... Semiconductor physics, quantum electronics & optoelectronics, 396-402, 2015	3	2015
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels SA Vitusevich, MV Petrychuk, AM Kurakin, SV Danylyuk, D Mayer, ... Journal of statistical mechanics: theory and experiment 2009 (01), P01046, 2009	3	2009
AlGaN/GaN heterostructures for hot electron and quantum effects SA Vitusevich, VA Sydoruk, AM Kurakin, N Klein, MV Petrychuk, ... Journal of Physics: Conference Series 152 (1), 012008, 2009	2	2009
Structural defects at heteroboundaries and photoluminescence properties of GaN and AlxGa1-xN/GaN epitaxial layers grown on sapphire VP Kladko, SV Chornen’kii, AV Naumov, AV Komarov, M Tasapo, ... Fizika Tekhnika Poluprovodnikov 40 (9), 1087-1093, 2006	2	2006
Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, LM Kapitanchuk, ... Semiconductors 47, 1180-1184, 2013	1	2013
The in-plane band bending effect around Au islands grown on the Bi2Te3 topological insulator A Naumov, M Chrobak, A Trembułowicz, M Jurczyszyn, K Maćkosz, ... Surface Science 745, 122490, 2024		2024
Magnetoresitance vs. electronic structure in Cu doped single crystalline Bi2Se3 3D topological insulator M Chrobak, K Maćkosz, K Nowak, A Naumov, M Przybylski Journal of Magnetism and Magnetic Materials 589, 171548, 2024		2024

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