Krishna C Mandal

Cited by

	All	Since 2016
Citations	3534	1513
h-index	31	19
i10-index	107	56

360

180

270

1990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202112 18 32 22 28 28 11 29 32 41 50 30 51 46 33 43 60 84 103 83 134 144 171 238 190 259 298 349 280 217 300 65

Co-authors

Ramesh KrishnaUniversity of South CarolinaVerified email at cec.sc.edu
Sandeep Kumar ChaudhuriUniversity of South CarolinaVerified email at mailbox.sc.edu
Sandip DasDepartment of Electrical Engineering, Kennesaw State UniversityVerified email at kennesaw.edu
Arnold BurgerProfessor of Physics at Fisk University, Adj. Prof. Physics & EE- Vanderbilt, & Joint Faculty-ORNLVerified email at fisk.edu
Stephen A. PayneLawrence Livermore National LaboratoryVerified email at llnl.gov
Kelvin J. ZavallaResearch Graduate Assistant, University of South CarolinaVerified email at email.sc.edu
Sung Hoon KangAssistant Professor, Mechanical Engineering, Johns Hopkins UniversityVerified email at jhu.edu
Utpal N. RoySavannah River National LaboratoryVerified email at bnl.gov
Alket MertiriBoston UniversityVerified email at bu.edu
Gerald jellisonSenior Scientist, Oak Ridge National LaboratoryVerified email at ornl.gov
Robert R. AlfanoThe City College of New YorkVerified email at ccny.cuny.edu
Xi-Cheng ZhangThe Institute of Optics, University of RochesterVerified email at rochester.edu

Krishna C Mandal

Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

Verified email at cec.sc.edu


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Studies on new chemically deposited photoconducting antimony trisulphide thin films O Savadogo, KC Mandal Solar energy materials and solar cells 26 (1-2), 117-136, 1992	211	1992
A study of magnetic flux-leakage signals K Mandal, DL Atherton Journal of Physics D: Applied Physics 31 (22), 3211, 1998	113	1998
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ... JOSA B 21 (12), 2117-2129, 2004	86	2004
Ultrafast Electronic Relaxation Dynamics in PbI₂ Semiconductor Colloidal Nanoparticles: A Femtosecond Transient Absorption Study A Sengupta, B Jiang, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999	84	1999
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 141 (10), 2871, 1994	71	1994
Measurement of Prompt Meson Azimuthal Anisotropy in Pb-Pb Collisions at AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ... Physical review letters 120 (20), 202301, 2018	58	2018
Investigations of magnetic flux leakage and magnetic Barkhausen noise signals from pipeline steel K Mandal, D Dufour, TW Krause, DL Atherton Journal of Physics D: Applied Physics 30 (6), 962, 1997	57	1997
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid O Savadogo, KC Mandal Journal of the Electrochemical Society 139 (1), L16, 1992	57	1992
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge KC Mandal, F Ozanam, JN Chazalviel Applied physics letters 57 (26), 2788-2790, 1990	51	1990
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis SK Chaudhuri, KJ Zavalla, KC Mandal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013	50	2013
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013	47	2013
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008	47	2008
Characterization of semi-insulating 4H silicon carbide for radiation detectors KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011	44	2011
Doping dependence of electronic and mechanical properties of GaSe 1− x Te x and Ga 1− x In x Se from first principles Z Rak, SD Mahanti, KC Mandal, NC Fernelius Physical Review B 82 (15), 155203, 2010	44	2010
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ... IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007	44	2007
Electronic structure of substitutional defects and vacancies in GaSe Z Rak, SD Mahanti, KC Mandal, NC Fernelius Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009	43	2009
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors: A Comparative Study of Colloidal BiI₃ and PbI₂ Nanoparticles A Sengupta, KC Mandal, JZ Zhang The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000	41	2000
Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacids O Savadogo, KC Mandal Materials chemistry and physics 31 (4), 301-309, 1992	41	1992
Simulation, modeling, and crystal growth of Cd 0.9 Zn 0.1 Te for nuclear spectrometers KC Mandal, SH Kang, M Choi, J Bello, L Zheng, H Zhang, M Groza, ... Journal of electronic materials 35 (6), 1251-1256, 2006	40	2006
Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide KC Mandal, PG Muzykov, R Krishna, T Hayes, TS Sudarshan Solid state communications 151 (7), 532-535, 2011	39	2011

The system can't perform the operation now. Try again later.

Articles 1–20

Citations per year

Duplicate citations

Merged citations

Add co-authorsCo-authors

Upload PDF

Follow this author

Cited by

Co-authors