Krishna C Mandal
Krishna C Mandal
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
Verified email at cec.sc.edu
Title
Cited by
Cited by
Year
Studies on new chemically deposited photoconducting antimony trisulphide thin films
O Savadogo, KC Mandal
Solar energy materials and solar cells 26 (1-2), 117-136, 1992
2111992
A study of magnetic flux-leakage signals
K Mandal, DL Atherton
Journal of Physics D: Applied Physics 31 (22), 3211, 1998
1131998
Optical properties of Nd 3+-and Tb 3+-doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay
K Rademaker, WF Krupke, RH Page, SA Payne, K Petermann, G Huber, ...
JOSA B 21 (12), 2117-2129, 2004
862004
Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles:  A Femtosecond Transient Absorption Study
A Sengupta, B Jiang, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 103 (16), 3128-3137, 1999
841999
Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2 S 3 Films Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 141 (10), 2871, 1994
711994
Measurement of Prompt Meson Azimuthal Anisotropy in Pb-Pb Collisions at
AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
Physical review letters 120 (20), 202301, 2018
582018
Investigations of magnetic flux leakage and magnetic Barkhausen noise signals from pipeline steel
K Mandal, D Dufour, TW Krause, DL Atherton
Journal of Physics D: Applied Physics 30 (6), 962, 1997
571997
Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid
O Savadogo, KC Mandal
Journal of the Electrochemical Society 139 (1), L16, 1992
571992
In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge
KC Mandal, F Ozanam, JN Chazalviel
Applied physics letters 57 (26), 2788-2790, 1990
511990
High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
SK Chaudhuri, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
502013
Low Energy X-Ray and-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry
IEEE Transactions on Nuclear Science 60 (4), 2888-2893, 2013
472013
III–VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors
KC Mandal, SH Kang, M Choi, J Chen, XC Zhang, JM Schleicher, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (2), 284-288, 2008
472008
Characterization of semi-insulating 4H silicon carbide for radiation detectors
KC Mandal, RM Krishna, PG Muzykov, S Das, TS Sudarshan
IEEE Transactions on Nuclear Science 58 (4), 1992-1999, 2011
442011
Doping dependence of electronic and mechanical properties of GaSe 1− x Te x and Ga 1− x In x Se from first principles
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Physical Review B 82 (15), 155203, 2010
442010
Characterization of Low-Defectand CdTe Crystals for High-Performance Frisch Collar Detectors
KC Mandal, SH Kang, M Choi, A Kargar, MJ Harrison, DS McGregor, ...
IEEE Transactions on Nuclear Science 54 (4), 802-806, 2007
442007
Electronic structure of substitutional defects and vacancies in GaSe
Z Rak, SD Mahanti, KC Mandal, NC Fernelius
Journal of Physics and Chemistry of Solids 70 (2), 344-355, 2009
432009
Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors:  A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles
A Sengupta, KC Mandal, JZ Zhang
The Journal of Physical Chemistry B 104 (40), 9396-9403, 2000
412000
Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacids
O Savadogo, KC Mandal
Materials chemistry and physics 31 (4), 301-309, 1992
411992
Simulation, modeling, and crystal growth of Cd 0.9 Zn 0.1 Te for nuclear spectrometers
KC Mandal, SH Kang, M Choi, J Bello, L Zheng, H Zhang, M Groza, ...
Journal of electronic materials 35 (6), 1251-1256, 2006
402006
Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide
KC Mandal, PG Muzykov, R Krishna, T Hayes, TS Sudarshan
Solid state communications 151 (7), 532-535, 2011
392011
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