| The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction JE Ayers Journal of Crystal Growth 135 (1-2), 71-77, 1994 | 594 | 1994 |
| Heteroepitaxy of semiconductors: theory, growth, and characterization JE Ayers, T Kujofsa, P Rago, J Raphael CRC press, 2016 | 498 | 2016 |
| Crystallographic tilting of heteroepitaxial layers JE Ayers, SK Ghandhi, LJ Schowalter Journal of crystal growth 113 (3-4), 430-440, 1991 | 232 | 1991 |
| Digital integrated circuits: analysis and design JE Ayers CRC Press, 2003 | 135 | 2003 |
| New model for the thickness and mismatch dependencies of threading dislocation densities in mismatched heteroepitaxial layers JE Ayers Journal of applied physics 78 (6), 3724-3726, 1995 | 75 | 1995 |
| Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles B Bertoli, EN Suarez, JE Ayers, FC Jain Journal of Applied Physics 106 (7), 2009 | 61 | 2009 |
| Post-growth thermal annealing of GaAs on Si (001) grown by organometallic vapor phase epitaxy JE Ayers, LJ Schowalter, SK Ghandhi Journal of crystal growth 125 (1-2), 329-335, 1992 | 61 | 1992 |
| Strain and misorientation in GaAs grown on Si (001) by organometallic epitaxy SK Ghandhi, JE Ayers Applied physics letters 53 (13), 1204-1206, 1988 | 53 | 1988 |
| Compliant substrates for heteroepitaxial semiconductor devices: theory, experiment, and current directions JE Ayers Journal of electronic materials 37, 1511-1523, 2008 | 42 | 2008 |
| X-ray determination of the dislocation densities in semiconductor crystals using a Bartels five-crystal diffractometer PD Healey, K Bao, M Gokhale, JE Ayers, FC Jain Acta Crystallographica Section A: Foundations of Crystallography 51 (4), 498-503, 1995 | 41 | 1995 |
| X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors B Yarlagadda, A Rodriguez, P Li, R Velampati, JF Ocampo, EN Suarez, ... Applied Physics Letters 92 (20), 2008 | 40 | 2008 |
| Electronics, power electronics, optoelectronics, microwaves, electromagnetics, and radar RJ Tallarida, RC Dorf, MNO Sadiku, HG Parks, EJ Kennedy, ... CRC press, 2018 | 37 | 2018 |
| Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures T Kujofsa, W Yu, S Cheruku, B Outlaw, S Xhurxhi, F Obst, D Sidoti, ... Journal of electronic materials 41, 2993-3000, 2012 | 36 | 2012 |
| Annealing induced nanostructure and photoluminescence property evolution in solution-processed Mg-alloyed ZnO nanowires P Shimpi, Y Ding, E Suarez, J Ayers, PX Gao Applied Physics Letters 97 (10), 2010 | 36 | 2010 |
| Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls XG Zhang, P Li, G Zhao, DW Parent, FC Jain, JE Ayers Journal of electronic materials 27, 1248-1253, 1998 | 32 | 1998 |
| Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing XG Zhang, A Rodriguez, X Wang, P Li, FC Jain, JE Ayers Applied Physics Letters 77 (16), 2524-2526, 2000 | 30 | 2000 |
| Overshoot graded layers for mismatched heteroepitaxial devices JF Ocampo, E Suarez, FC Jain, JE Ayers Journal of electronic materials 37, 1035-1043, 2008 | 25 | 2008 |
| Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication XG Zhang, P Li, DW Parent, G Zhao, JE Ayers, FC Jain Journal of electronic materials 28, 553-558, 1999 | 24 | 1999 |
| X-ray diffraction studies of CdTe grown on InSb IB Bhat, K Patel, NR Taskar, JE Ayers, SK Ghandhi Journal of crystal growth 88 (1), 23-29, 1988 | 23 | 1988 |
| Nonvolatile memories using quantum dot (QD) floating gates assembled on II–VI tunnel insulators E Suarez, M Gogna, F Al-Amoody, S Karmakar, J Ayers, E Heller, F Jain Journal of electronic materials 39, 903-907, 2010 | 22 | 2010 |
Tedi KujofsaUniversity of ConnecticutVerified email at uconn.edu
