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Andrew Y. Kim
Andrew Y. Kim
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Verified email at alum.mit.edu
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Cited by
Year
High power LEDs–technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3072002
Indium gallium nitride smoothing structures for III-nitride devices
WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,635,904, 2003
2552003
Indium gallium nitride smoothing structures for III-nitride devices
WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,489,636, 2002
1992002
Performance of high‐power III‐nitride light emitting diodes
G Chen, M Craven, A Kim, A Munkholm, S Watanabe, M Camras, W Götz, ...
physica status solidi (a) 205 (5), 1086-1092, 2008
1832008
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Integrated Optoelectronic Devices 2004, 20-25, 2004
1772004
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Applied physics letters 82 (14), 2221-2223, 2003
1742003
Dislocation dynamics in relaxed graded composition semiconductors
EA Fitzgerald, AY Kim, MT Currie, TA Langdo, G Taraschi, MT Bulsara
Materials Science and Engineering: B 67 (1), 53-61, 1999
1701999
Performance of high-power AlInGaN light emitting diodes
AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ...
physica status solidi(a) 188 (1), 15-21, 2001
1602001
Dislocation glide and blocking kinetics in compositionally graded SiGe/Si
CW Leitz, MT Currie, AY Kim, J Lai, E Robbins, EA Fitzgerald, MT Bulsara
Journal of Applied Physics 90 (6), 2730-2736, 2001
1152001
Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes
JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski
Solid state communications 137 (4), 230-234, 2006
732006
Local indium segregation and band structure in high efficiency green light emitting InGaN/GaN diodes
JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski
Lawrence Berkeley National Laboratory, 2004
73*2004
Method of producing device quality (Al) InGaP alloys on lattice-mismatched substrates
AY Kim, EA Fitzgerald
US Patent 6,805,744, 2004
732004
III-Nitride light emitting devices with low driving voltage
W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ...
US Patent 6,630,692, 2003
672003
Evolution of microstructure and dislocation dynamics in graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality …
AY Kim, WS McCullough, EA Fitzgerald
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
641999
Growth of III-nitride light emitting devices on textured substrates
AY Kim, SA Maranowski
US Patent 7,633,097, 2009
392009
Green phosphor-converted LED
R Mueller-Mach, GO Mueller, TA Trottier, MR Krames, A Kim, ...
International Symposium on Optical Science and Technology, 131-136, 2002
272002
Current dependence of in-plane electroluminescence distribution of InxGa1-xN/GaN multiple quantum well light emitting diodes
H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman
Japanese journal of applied physics 42 (10B), L1244, 2003
232003
Letters-Semiconductors-Current Dependence of In-Plane Electroluminescence Distribution of InxGa1-xN/GaN Multiple Quantum Well Light Emitting Diodes
H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman
Japanese Journal of Applied Physics-Part 2 Letters 42 (10), L1244, 2003
23*2003
Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering
LM McGill, EA Fitzgerald, AY Kim, JW Huang, SS Yi, PN Grillot, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
152004
Visible light-emitting diodes grown on optimized∇ x [InxGa1− x] P/GaP epitaxial transparent substrates with controlled dislocation density
AY Kim, ME Groenert, EA Fitzgerald
Journal of electronic materials 29 (8), L9-L12, 2000
122000
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Articles 1–20