Dan Mocuta
Dan Mocuta
Verified email at micron.com
Title
Cited by
Cited by
Year
Method of preventing surface roughening during hydrogen prebake of SiGe substrates
H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana
US Patent 6,958,286, 2005
2762005
MOSFET with super-steep retrograded island
H Zhu, E Leobandung, AC Mocuta, DM Mocuta
US Patent 7,723,750, 2010
2492010
Structure and method for manufacturing MOSFET with super-steep retrograded island
H Zhu, E Leobandung, AC Mocuta, DM Mocuta
US Patent 7,268,049, 2007
1312007
High performance CMOS device structure with mid-gap metal gate
AC Mocuta, M Ieong, RS Amos, DC Boyd, DM Mocuta, H Chen
US Patent 6,916,698, 2005
1292005
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
H Mertens, R Ritzenthaler, A Hikavyy, MS Kim, Z Tao, K Wostyn, SA Chew, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
1192016
Chemical treatment to retard diffusion in a semiconductor overlayer
KK Chan, H Chen, MA Gribelyuk, JR Holt, WH Lee, RM Mitchell, RT Mo, ...
US Patent 7,071,103, 2006
1192006
Strained Si CMOS (SS CMOS) technology: opportunities and challenges
K Rim, R Anderson, D Boyd, F Cardone, K Chan, H Chen, S Christansen, ...
Solid-State Electronics 47 (7), 1133-1139, 2003
1182003
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
D Chidambarrao, AC Mocuta, DM Mocuta, C Radens
US Patent 7,691,698, 2010
992010
Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
H Chen, D Mocuta, R Murphy, S Bedell, D Sadana
US Patent App. 10/751,207, 2005
902005
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016
882016
Test Structure and e-Beam Inspection Methodology for In-line Detection of (Non-visual) Missing Spacer Defects
OD Patterson, K Wu, D Mocuta, K Nafisi
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 48-53, 2007
872007
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
B Walsh, H Utomo, E Leobandung, A Mahorowala, D Mocuta, K Miyamoto, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 170-171, 2006
842006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
E Leobandung, H Nayakama, D Mocuta, K Miyamoto, M Angyal, HV Meer, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 126-127, 2005
822005
High performance CMOS device structure with mid-gap metal gate
AC Mocuta, M Ieong, RS Amos, DC Boyd, DM Mocuta, H Chen
US Patent 6,762,469, 2004
74*2004
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
WH Lee, A Waite, H Nii, HM Nayfeh, V McGahay, H Nakayama, D Fried, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4…, 2005
652005
Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration
H Mertens, R Ritzenthaler, V Pena, G Santoro, K Kenis, A Schulze, ...
2017 IEEE International Electron Devices Meeting (IEDM), 37.4. 1-37.4. 4, 2017
602017
Impact of Wire Geometry on Interconnect RC and Circuit Delay
I Ciofi, A Contino, PJ Roussel, R Baert, VH Vega-Gonzalez, K Croes, ...
IEEE Transactions on Electron Devices 63 (6), 2488-2496, 2016
592016
High performance 32nm SOI CMOS with high-k/metal gate and 0.149m2SRAM and ultra low-k back end with eleven levels of copper
B Greene, Q Liang, K Amarnath, Y Wang, J Schaeffer, M Cai, Y Liang, ...
2009 Symposium on VLSI Technology, 140-141, 2009
592009
InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
A Alian, Y Mols, CCM Bordallo, D Verreck, A Verhulst, A Vandooren, ...
Applied Physics Letters 109 (24), 243502, 2016
562016
Adsorbate–adsorbate repulsions—the coverage dependence of the adsorption structure of CO on Cu (110) as studied by electron‐stimulated desorption ion angular distribution
J Ahner, D Mocuta, RD Ramsier, JT Yates Jr
The Journal of chemical physics 105 (15), 6553-6559, 1996
541996
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