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Dr.S.Manikandan
Dr.S.Manikandan
Principal Engineer, Global Foundries Singapore
Verified email at globalfoundries.com
Title
Cited by
Cited by
Year
The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET
S Manikandan, NB Balamurugan
Journal of Computational Electronics 19 (2), 613-621, 2020
222020
Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs
S Manikandan, NB Balamurugan, TSA Samuel
Materials Science in Semiconductor Processing 104, 104653, 2019
202019
Analytical model of double gate stacked oxide junctionless transistor considering source/drain depletion effects for CMOS low power applications
S Manikandan, NB Balamurugan, D Nirmal
Silicon 12, 2053-2063, 2020
182020
Android application based smart bus transportation system for pandemic situations
RS Krishnan, S Manikandan, JRF Raj, KL Narayanan, YH Robinson
2021 Third international conference on intelligent communication …, 2021
172021
A compact analytical model for 2D triple material surrounding gate nanowire tunnel field effect transistors
D Saraswathi, NB Balamurugan, GL Priya, S Manikandan
Intelligent Computing and Applications: Proceedings of the International …, 2015
122015
Analytical modeling of dual material gate all around stack architecture of tunnel FET
NB Balamurugan, GL Priya, S Manikandan, G Srimathi
2016 29th International Conference on VLSI Design and 2016 15th …, 2016
112016
Density, Species richness and aboveground biomass of trees in 10 hectare permanent study plot, Pachaimalai, Tamil Nadu
M Udayakumar, S Manikandan, BT Selvan, T Sekar
Scholars Academic Journal of Bioscience 4 (4), 342-347, 2016
72016
Woody Stem Density and Above-Ground Biomass in Pachaimalai Hills of Southern Eastern Ghats, Tamil Nadu, India
S Manikandan, M Udaykumar, T Sekar
Int. J. Res. Appl. Sci. Eng. Tech 7 (1), 151-158, 2019
42019
Subthreshold behavior of AlInSb/InSb high electron mobility transistors
S Theodore Chandra, S, Balamurugan, NB, Lakshmi Priya, G & Manikandan
Chinese Physics B 24 (7), 076105-1 – 076105-5., 2015
32015
A physics based threshold voltage modeling of trigate junctionless FinFETs considering Gaussian doping
S Manikandan, NB Balamurugan
Silicon, 1-8, 2021
12021
Analytical Approach on the Scale Length Model for Triple Material Surrounding Gate Tunnel Field Effect Transistors (TMSG - TFETs
S Vanitha, P, Lakshmi Priya, G, Balamurugan, NB, Theodore Chandra, S ...
International Conference on Intelligent Computing and Applications, 2014
1*2014
A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective
S Banchhor, N Bagga, N Chauhan, S Manikandan, A Dasgupta, ...
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
Investigation on Ambipolar Current Suppression in Tunnel FETs
AP Mohammad Ehteshamuddin, S. Manikandan
Tunneling Field Effect Transistors, 2023
2023
Historical Development of MOS Technology to Tunnel FETs
AP S.Manikandan
Tunneling Field Effect Transistors, 2023
2023
Analysis of Self-Heating in 5nm Stacked Nanosheet Transistor
AB S. Banchhor, N. Bagga, N. Chauhan, S. Manikandan, A. Dasgupta, S. Dasgupta
International Workshop on Physics of Semiconductor Devices (IWPSD), 2022
2022
Analysis and Modeling of Leakage Currents in Stacked Gate-All-Around Nanosheet Transistors
S Manikandan, N Chauhan, N Bagga, A Kumar, S Banchhor, S Roy, ...
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022
2022
Improved CMOS Inverter Characteristics of Junctionless FinFETs using Gaussian Doping
S Manikandan, M Asirvatham, R Rini, KL Narayanan
2021 Third International Conference on Intelligent Communication …, 2021
2021
Phytochemical screening and GC-MS analysis of Clausena dentata (Willd.) roem.
S Manikandan, G Priya, E Rajesh, T Sekar
2021
Subthreshold behavior of AlInSb/InSb high electron mobility transistors
CS Theodore, NB Balamurugan, G Lakshmi, S Manikandan
中国物理 B: 英文版, 360-364, 2015
2015
Transconductance-to-Drain Current Ratio and Subthreshold Analysis of Tri-Material Gate-All-Around Silicon Nanowire Tunnel FET
MS Saraswathi D, Lakshmi Priya G, Balamurugan NB
International Journal of Applied Engineering and Research 10 (2), 1381-1387, 2015
2015
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