| Dark current filtering in unipolar barrier infrared detectors GR Savich, JR Pedrazzani, DE Sidor, S Maimon, GW Wicks Applied Physics Letters 99 (12), 2011 | 106 | 2011 |
| Benefits and limitations of unipolar barriers in infrared photodetectors GR Savich, JR Pedrazzani, DE Sidor, GW Wicks Infrared Physics & Technology 59, 152-155, 2013 | 61 | 2013 |
| Surface dark current mechanisms in III-V infrared photodetectors BT Marozas, WD Hughes, X Du, DE Sidor, GR Savich, GW Wicks Optical Materials Express 8 (6), 1419-1424, 2018 | 54 | 2018 |
| Surface leakage mechanisms in III–V infrared barrier detectors DE Sidor, GR Savich, GW Wicks Journal of Electronic Materials 45, 4663-4667, 2016 | 50 | 2016 |
| Diffusion current characteristics of defect-limited nBn mid-wave infrared detectors GR Savich, DE Sidor, X Du, CP Morath, VM Cowan, GW Wicks Applied Physics Letters 106 (17), 2015 | 32 | 2015 |
| Use of unipolar barriers to block dark currents in infrared detectors GR Savich, JR Pedrazzani, DE Sidor, S Maimon, GW Wicks Infrared Technology and Applications XXXVII 8012, 910-919, 2011 | 29 | 2011 |
| Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared AP Craig, F Al-Saymari, M Jain, A Bainbridge, GR Savich, T Golding, ... Applied Physics Letters 114 (15), 2019 | 27 | 2019 |
| Infrared detector epitaxial designs for suppression of surface leakage current GW Wicks, GR Savich, JR Pedrazzani, S Maimon Quantum Sensing and Nanophotonic Devices VII 7608, 631-638, 2010 | 25 | 2010 |
| Suppression of lateral diffusion and surface leakage currents in nBn photodetectors using an inverted design X Du, GR Savich, BT Marozas, GW Wicks Journal of Electronic Materials 47, 1038-1044, 2018 | 24 | 2018 |
| Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers GR Savich, JR Pedrazzani, S Maimon, GW Wicks Journal of Vacuum Science & Technology B 28 (3), C3H18-C3H21, 2010 | 21 | 2010 |
| Defect-related surface currents in InAs-based nBn infrared detectors X Du, BT Marozas, GR Savich, GW Wicks Journal of Applied Physics 123 (21), 2018 | 19 | 2018 |
| III-V semiconductor extended short-wave infrared detectors GR Savich, DE Sidor, X Du, GW Wicks, MC Debnath, TD Mishima, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 18 | 2017 |
| Mid-IR resonant cavity detectors TA O'Loughlin, GR Savich, DE Sidor, BT Marozas, TD Golding, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 14 | 2017 |
| Surface conduction in InAs and GaSb DE Sidor, GR Savich, GW Wicks Nanophotonics and Macrophotonics for Space Environments IX 9616, 242-248, 2015 | 14 | 2015 |
| Extended-shortwave infrared unipolar barrier detectors GW Wicks, TD Golding, M Jain, GR Savich, DE Sidor, X Du, MC Debnath, ... Quantum Sensing and Nanophotonic Devices XII 9370, 445-451, 2015 | 14 | 2015 |
| Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors GR Savich, JR Pedrazzani, S Maimon, GW Wicks physica status solidi c 7 (10), 2540-2543, 2010 | 14 | 2010 |
| MBE growth techniques for InAs-based nBn IR detectors DE Sidor, GR Savich, BT Marozas, X Du, TA O'Loughlin, GD Jenkins, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 9 | 2017 |
| Flat-band pn-based unipolar barrier photodetector DE Sidor, GR Savich, X Du, GW Wicks Infrared Physics & Technology 70, 111-114, 2015 | 9 | 2015 |
| Large barrier InAs quantum dots with efficient room temperature photon emission at telecom wavelengths WD Hughes, GR Savich, K Shayan, AN Vamivakas, GW Wicks Applied Physics Letters 116 (20), 2020 | 6 | 2020 |
| Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors X Du, GR Savich, BT Marozas, GW Wicks Infrared Technology and Applications XLIII 10177, 398-406, 2017 | 6 | 2017 |
Daniel SidorMIT Lincoln LaboratoryVerified email at ll.mit.edu
