Ilan Shalish
Ilan Shalish
Verified email at - Homepage
Cited by
Cited by
Size-dependent surface luminescence in ZnO nanowires
I Shalish, H Temkin, V Narayanamurti
Physical Review B 69 (24), 245401, 2004
Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires
J Bao, I Shalish, Z Su, R Gurwitz, F Capasso, X Wang, Z Ren
Nanoscale research letters 6 (1), 1-7, 2011
Yellow luminescence and related deep levels in unintentionally doped GaN films
I Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J Salzman
Physical Review B 59 (15), 9748, 1999
Surface states and surface oxide in GaN layers
I Shalish, Y Shapira, L Burstein, J Salzman
Journal of Applied Physics 89 (1), 390-395, 2001
Catalytic hydride vapour phase epitaxy growth of GaN nanowires
G Seryogin, I Shalish, W Moberlychan, V Narayanamurti
Nanotechnology 16 (10), 2342, 2005
Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage
R Gurwitz, R Cohen, I Shalish
Journal of Applied Physics 115 (3), 033701, 2014
Grain-boundary-controlled transport in GaN layers
I Shalish, L Kronik, G Segal, Y Shapira, S Zamir, B Meyler, J Salzman
Physical Review B 61 (23), 15573, 2000
Yellow luminescence and Fermi level pinning in GaN layers
I Shalish, L Kronik, G Segal, Y Shapira, M Eizenberg, J Salzman
Applied Physics Letters 77 (7), 987-989, 2000
Photoinduced charge carriers at surfaces and interfaces of poly [2− methoxy− 5−(2′− e t h y l− h e x y l o x y)− 1, 4− phenylene vinylene] with Au and GaAs
J Yang, I Shalish, Y Shapira
Physical Review B 64 (3), 035325, 2001
Size-dependent impurity activation energy in GaN nanowires
J Yoon, AM Girgis, I Shalish, LR Ram-Mohan, V Narayanamurti
Applied Physics Letters 94 (14), 142102, 2009
Electroluminescence from single nanowires by tunnel injection: an experimental study
MA Zimmler, J Bao, I Shalish, W Yi, J Yoon, V Narayanamurti, F Capasso
Nanotechnology 18 (23), 235205, 2007
Thermal stability of Pt Schottky contacts to 4H–SiC
I Shalish, CEM De Oliveira, Y Shapira, L Burstein, M Eizenberg
Journal of Applied Physics 88 (10), 5724-5728, 2000
Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure
R Gurwitz, A Tavor, L Karpeles, I Shalish, W Yi, G Seryogin, ...
Applied Physics Letters 100 (19), 191602, 2012
Observations of conduction-band structure of 4 H-and 6 H− SiC
I Shalish, IB Altfeder, V Narayanamurti
Physical Review B 65 (7), 073104, 2002
Gold metallization for aluminum nitride
I Shalish, SM Gasser, E Kolawa, MA Nicolet, RP Ruiz
Thin Solid Films 289 (1-2), 166-169, 1996
A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection
MA Zimmler, J Bao, I Shalish, W Yi, V Narayanamurti, F Capasso
Nanotechnology 18 (39), 395201, 2007
Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire
I Shalish, G Seryogin, W Yi, JM Bao, MA Zimmler, E Likovich, DC Bell, ...
Nanoscale research letters 4 (6), 532-537, 2009
Technology for thermodynamically stable contacts for binary wide band gap semiconductors
I Shalish, Y Shapira, M Eizenberg
US Patent 6,410,460, 2002
Method for electrical characterization of nanowires
R Gurwitz, I Shalish
Nanotechnology 22 (43), 435705, 2011
Thermal stability of Re Schottky contacts to 6H-SiC
I Shalish, Y Shapira
IEEE electron device letters 21 (12), 581-583, 2000
The system can't perform the operation now. Try again later.
Articles 1–20