Elizabeth H. Steenbergen
Elizabeth H. Steenbergen
Raytheon Technologies
Verified email at asu.edu
Title
Cited by
Cited by
Year
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ...
Applied Physics Letters 99 (25), 251110, 2011
2652011
Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement
SH Lim, JJ Li, EH Steenbergen, YH Zhang
Progress in Photovoltaics: Research and Applications 21 (3), 344-350, 2013
762013
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Journal of Applied Physics 118 (24), 245706, 2015
562015
Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy
J Lu, E Luna, T Aoki, EH Steenbergen, YH Zhang, DJ Smith
Journal of Applied Physics 119 (9), 095702, 2016
452016
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength …
Y Huang, JH Ryou, RD Dupuis, VR D'costa, EH Steenbergen, J Fan, ...
Journal of Crystal Growth 314 (1), 92-96, 2011
432011
Microscale c-Si (c) PV cells for low-cost power
GN Nielson, M Okandan, P Resnick, JL Cruz-Campa, T Pluym, PJ Clews, ...
2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001816-001821, 2009
362009
Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
EH Steenbergen, K Nunna, L Ouyang, B Ullrich, DL Huffaker, DJ Smith, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
322012
Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices
ZY Lin, S Liu, EH Steenbergen, YH Zhang
Applied Physics Letters 107 (20), 201107, 2015
292015
Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition
EH Steenbergen, Y Huang, JH Ryou, L Ouyang, JJ Li, DJ Smith, ...
Applied Physics Letters 99 (7), 071111, 2011
282011
Microscale PV cells for concentrated PV applications
GN Nielson, M Okandan, P Resnick, JL Cruz-Campa, P Clews, ...
24th EU PVSEC, 170-173, 2009
282009
Optically-addressed two-terminal multicolor photodetector
EH Steenbergen, MJ DiNezza, WHG Dettlaff, SH Lim, YH Zhang
Applied Physics Letters 97 (16), 161111, 2010
272010
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Applied Physics Letters 106 (6), 061907, 2015
212015
Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices
K Mahalingam, EH Steenbergen, GJ Brown, YH Zhang
Applied physics letters 103 (6), 061908, 2013
202013
Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1− xSbx type-II superlattices
EH Steenbergen, JA Massengale, G Ariyawansa, YH Zhang
Journal of Luminescence 178, 451-456, 2016
192016
Study of the valence band offsets between InAs and InAs1-xSbx alloys
EH Steenbergen, OO Cellek, D Lubyshev, Y Qiu, JM Fastenau, AWK Liu, ...
Quantum Sensing and Nanophotonic Devices IX 8268, 82680K, 2012
192012
InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors
G Ariyawansa, CJ Reyner, EH Steenbergen, JM Duran, JD Reding, ...
Applied Physics Letters 108 (2), 022106, 2016
182016
Analysis of spectral photocurrent response from multi-junction solar cells under variable voltage bias
SH Lim, K O'Brien, EH Steenbergen, JJ Li, D Ding, YH Zhang
2010 35th IEEE Photovoltaic Specialists Conference, 000712-000716, 2010
182010
Temperature-dependent minority carrier lifetimes of InAs/InAs [sub] 1-x [/sub] Sb [sub] x [/sub] type-II superlattices
EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ...
Infrared Sensors, Devices, and Applications II 8512, 85120L, 2012
172012
Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy
L Ouyang, EH Steenbergen, YH Zhang, K Nunna, DL Huffaker, DJ Smith
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
162012
Determination of the Mott-Hubbard gap in GdTiO 3
L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ...
Physical Review B 92 (8), 085111, 2015
152015
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