| Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ... Applied Physics Letters 99 (25), 251110, 2011 | 307 | 2011 |
| Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement SH Lim, JJ Li, EH Steenbergen, YH Zhang Progress in Photovoltaics: Research and Applications 21 (3), 344-350, 2013 | 81 | 2013 |
| Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Journal of Applied Physics 118 (24), 245706, 2015 | 79 | 2015 |
| Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy J Lu, E Luna, T Aoki, EH Steenbergen, YH Zhang, DJ Smith Journal of Applied Physics 119 (9), 095702, 2016 | 59 | 2016 |
| Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength … Y Huang, JH Ryou, RD Dupuis, VR D'costa, EH Steenbergen, J Fan, ... Journal of Crystal Growth 314 (1), 92-96, 2011 | 49 | 2011 |
| Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices ZY Lin, S Liu, EH Steenbergen, YH Zhang Applied Physics Letters 107 (20), 201107, 2015 | 42 | 2015 |
| Microscale c-Si (c) PV cells for low-cost power GN Nielson, M Okandan, P Resnick, JL Cruz-Campa, T Pluym, PJ Clews, ... 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 001816-001821, 2009 | 37 | 2009 |
| Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates EH Steenbergen, K Nunna, L Ouyang, B Ullrich, DL Huffaker, DJ Smith, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012 | 36 | 2012 |
| Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Applied Physics Letters 106 (6), 061907, 2015 | 32 | 2015 |
| Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition EH Steenbergen, Y Huang, JH Ryou, L Ouyang, JJ Li, DJ Smith, ... Applied Physics Letters 99 (7), 071111, 2011 | 32 | 2011 |
| Optically-addressed two-terminal multicolor photodetector EH Steenbergen, MJ DiNezza, WHG Dettlaff, SH Lim, YH Zhang Applied Physics Letters 97 (16), 161111, 2010 | 28 | 2010 |
| Microscale PV cells for concentrated PV applications GN Nielson, M Okandan, P Resnick, JL Cruz-Campa, P Clews, ... 24th EU PVSEC, 170-173, 2009 | 28 | 2009 |
| InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors G Ariyawansa, CJ Reyner, EH Steenbergen, JM Duran, JD Reding, ... Applied Physics Letters 108 (2), 022106, 2016 | 25 | 2016 |
| Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1− xSbx type-II superlattices EH Steenbergen, JA Massengale, G Ariyawansa, YH Zhang Journal of Luminescence 178, 451-456, 2016 | 22 | 2016 |
| Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices G Ariyawansa, CJ Reyner, JM Duran, JD Reding, JE Scheihing, ... Applied Physics Letters 109 (2), 021112, 2016 | 20 | 2016 |
| Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices K Mahalingam, EH Steenbergen, GJ Brown, YH Zhang Applied physics letters 103 (6), 061908, 2013 | 20 | 2013 |
| Temperature-dependent minority carrier lifetimes of InAs/InAs [sub] 1-x [/sub] Sb [sub] x [/sub] type-II superlattices EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ... Infrared Sensors, Devices, and Applications II 8512, 133-140, 2012 | 20 | 2012 |
| Analysis of spectral photocurrent response from multi-junction solar cells under variable voltage bias SH Lim, K O'Brien, EH Steenbergen, JJ Li, D Ding, YH Zhang 2010 35th IEEE Photovoltaic Specialists Conference, 000712-000716, 2010 | 20 | 2010 |
| Determination of the Mott-Hubbard gap in GdTiO 3 L Bjaalie, A Verma, B Himmetoglu, A Janotti, S Raghavan, V Protasenko, ... Physical Review B 92 (8), 085111, 2015 | 19 | 2015 |
| Study of the valence band offsets between InAs and InAs1-xSbx alloys EH Steenbergen, OO Cellek, D Lubyshev, Y Qiu, JM Fastenau, AWK Liu, ... Quantum Sensing and Nanophotonic Devices IX 8268, 113-121, 2012 | 19 | 2012 |
Yong-Hang ZhangProf., School of Electrical, Computer and Energy EngineeringVerified email at asu.edu
