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Arnab Sen Gupta
Arnab Sen Gupta
PhD-Penn State University/ Sr. Researcher-R&D at Components Research Organization, Intel Corporation
Verified email at psu.edu - Homepage
Title
Cited by
Cited by
Year
Soft chemistry of ion-exchangeable layered metal oxides
R Uppuluri, AS Gupta, AS Rosas, TE Mallouk
Chemical Society Reviews 47 (7), 2401-2430, 2018
1512018
Frontiers in the growth of complex oxide thin films: past, present, and future of hybrid MBE
M Brahlek, AS Gupta, J Lapano, J Roth, HT Zhang, L Zhang, R Haislmaier, ...
Advanced Functional Materials 28 (9), 1702772, 2018
1082018
Ferroelectric Sr3Zr2O7: Competition between Hybrid Improper Ferroelectric and Antiferroelectric Mechanisms
S Yoshida, K Fujita, H Akamatsu, O Hernandez, A Sen Gupta, FG Brown, ...
Advanced Functional Materials 28 (30), 1801856, 2018
962018
Hybrid improper ferroelectricity in (Sr, Ca) 3Sn2O7 and beyond: universal relationship between ferroelectric transition temperature and tolerance factor in n= 2 Ruddlesden …
S Yoshida, H Akamatsu, R Tsuji, O Hernandez, H Padmanabhan, ...
Journal of the American Chemical Society 140 (46), 15690-15700, 2018
812018
Inversion Symmetry Breaking by Oxygen Octahedral Rotations in the Ruddlesden-Popper Na R TiO 4 Family
H Akamatsu, K Fujita, T Kuge, AS Gupta, A Togo, S Lei, F Xue, G Stone, ...
Physical review letters 112 (18), 187602, 2014
732014
Advancing 2D monolayer CMOS through contact, channel and interface engineering
KP O'Brien, CJ Dorow, A Penumatcha, K Maxey, S Lee, CH Naylor, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2021
552021
Magnetostriction-polarization coupling in multiferroic Mn2MnWO6
MR Li, EE McCabe, PW Stephens, M Croft, L Collins, SV Kalinin, Z Deng, ...
Nature communications 8 (1), 2037, 2017
462017
Relaxor ferroelectric behavior in barium strontium titanate
LM Garten, M Burch, AS Gupta, R Haislmaier, V Gopalan, EC Dickey, ...
Journal of the American Ceramic Society 99 (5), 1645-1650, 2016
462016
Advancing Monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling
C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ...
IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021
372021
Emergent Noncentrosymmetry and Piezoelectricity Driven by Oxygen Octahedral Rotations in n = 2 Dion–Jacobson Phase Layer Perovskites
ME Strayer, AS Gupta, H Akamatsu, S Lei, NA Benedek, V Gopalan, ...
Advanced Functional Materials 26 (12), 1930-1937, 2016
372016
Improper Inversion Symmetry Breaking and Piezoelectricity through Oxygen Octahedral Rotations in Layered Perovskite Family, LiRTiO4 (R = Rare Earths)
AS Gupta, H Akamatsu, ME Strayer, S Lei, T Kuge, K Fujita, C dela Cruz, ...
Advanced Electronic Materials 2 (1), 1500196, 2016
322016
Competing Polar and Antipolar Structures in the Ruddlesden–Popper Layered Perovskite Li2SrNb2O7
R Uppuluri, H Akamatsu, A Sen Gupta, H Wang, CM Brown, ...
Chemistry of Materials 31 (12), 4418-4425, 2019
302019
PbMn(IV)TeO6: A New Noncentrosymmetric Layered Honeycomb Magnetic Oxide
SW Kim, Z Deng, MR Li, A Sen Gupta, H Akamatsu, V Gopalan, ...
Inorganic chemistry 55 (3), 1333-1338, 2016
262016
Competing Structural Instabilities in the Ruddlesden–Popper Derivatives HRTiO4 (R = Rare Earths): Oxygen Octahedral Rotations Inducing Noncentrosymmetricity …
A Sen Gupta, H Akamatsu, FG Brown, MAT Nguyen, ME Strayer, ...
Chemistry of Materials 29 (2), 656-665, 2016
252016
Reinvestigation of Electric Field‐Induced Optical Activity in α‐Quartz: Application of a Polarimeter With Four Photoelastic Modulators
AS Gupta, O Arteaga, R Haislmaier, B Kahr, V Gopalan
Chirality 26 (9), 430-433, 2014
122014
-site cation size effect on oxygen octahedral rotations in acentric Ruddlesden-Popper alkali rare-earth titanates
H Akamatsu, K Fujita, T Kuge, AS Gupta, JM Rondinelli, I Tanaka, ...
Physical Review Materials 3 (6), 065001, 2019
112019
Emergent room temperature polar phase in CaTiO3 nanoparticles and single crystals
MO Ramirez, TTA Lummen, I Carrasco, E Barnes, U Aschauer, ...
APL materials 7 (1), 2019
102019
300 mm MOCVD 2D CMOS materials for more (than) Moore scaling
K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
92022
Epitaxial layers on contact electrodes for thin-film transistors
SH Sung, J Weber, M Metz, ASEN GUPTA, A Sharma, B Chu-Kung, ...
US Patent 11,522,060, 2022
82022
Transistor structures with a metal oxide contact buffer
G Dewey, A Sharma, V Le, J Kavalieros, S Shivaraman, SH Sung, ...
US Patent 11,171,243, 2021
62021
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