Paul J Simmonds
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Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection
HW Li, BE Kardynał, P See, AJ Shields, P Simmonds, HE Beere, ...
Applied Physics Letters 91 (7), 073516-073516-3, 2007
Electrochemically induced amorphous-to-rock-salt phase transformation in niobium oxide electrode for Li-ion batteries
P Barnes, Y Zuo, K Dixon, D Hou, S Lee, Z Ma, JG Connell, H Zhou, ...
Nature Materials 21 (7), 795-803, 2022
Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A,(111) B, and (110)
CD Yerino, B Liang, DL Huffaker, PJ Simmonds, ML Lee
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2017
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
BC Juang, RB Laghumavarapu, BJ Foggo, PJ Simmonds, A Lin, B Liang, ...
Applied Physics Letters 106 (11), 111101, 2015
Tensile-strained growth on low-index GaAs
PJ Simmonds, M Larry Lee
Journal of Applied Physics 112 (5), 054313, 2012
Strain-driven quantum dot self-assembly by molecular beam epitaxy
KE Sautter, KD Vallejo, PJ Simmonds
Journal of Applied Physics 128 (3), 031101, 2020
Strain-driven growth of GaAs (111) quantum dots with low fine structure splitting
CD Yerino, PJ Simmonds, B Liang, D Jung, C Schneider, S Unsleber, ...
Applied Physics Letters 105 (25), 251901, 2014
Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain
PJ Simmonds, CD Yerino, M Sun, B Liang, DL Huffaker, VG Dorogan, ...
ACS nano 7 (6), 5017-5023, 2013
Self-assembly on (111)-oriented III-V surfaces
PJ Simmonds, M Larry Lee
Applied Physics Letters 99 (12), 123111, 2011
Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
J Simon, S Tomasulo, PJ Simmonds, M Romero, ML Lee
Journal of Applied Physics 109 (1), 013708, 2011
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs (Sb) cladding layers
PJ Simmonds, R Babu Laghumavarapu, M Sun, A Lin, CJ Reyner, ...
Applied Physics Letters 100 (24), 243108, 2012
Photoluminescence from In0.5Ga0.5P/GaP quantum dots coupled to photonic crystal cavities
K Rivoire, S Buckley, Y Song, P Simmonds, ML Lee, J Vučković
Frontiers in Optics 2011/Laser Science XXVII, OSA Technical Digest (Optical†…, 2011
Quantum transport in In 0.75 Ga 0.25 As quantum wires
PJ Simmonds, F Sfigakis, HE Beere, DA Ritchie, M Pepper, D Anderson, ...
Appl. Phys. Lett 92, 152108, 2008
Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
HM Ji, B Liang, PJ Simmonds, BC Juang, T Yang, RJ Young, DL Huffaker
Applied Physics Letters 106 (10), 103104, 2015
Self-assembled In 0.5 Ga 0.5 As quantum dots on GaP
Y Song, PJ Simmonds, ML Lee
Applied Physics Letters 97, 223110, 2010
Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy
CF Schuck, RA McCown, A Hush, A Mello, S Roy, JW Spinuzzi, B Liang, ...
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2018
Defect generation in TiO 2 nanotube anodes via heat treatment in various atmospheres for lithium-ion batteries
AI Savva, KA Smith, M Lawson, SR Croft, AE Weltner, CD Jones, H Bull, ...
Physical Chemistry Chemical Physics 20 (35), 22537-22546, 2018
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
CF Schuck, SK Roy, T Garrett, Q Yuan, Y Wang, CI Cabrera, ...
Scientific reports 9 (1), 18179, 2019
Tensile strained island growth at step-edges on GaAs (110)
PJ Simmonds, ML Lee
Applied Physics Letters 97 (15), 153101, 2010
Improved quantum dot stacking for intermediate band solar cells using strain compensation
PJ Simmonds, M Sun, RB Laghumavarapu, B Liang, AG Norman, JW Luo, ...
Nanotechnology 25 (44), 445402, 2014
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Articles 1–20