| Simulation of single particle displacement damage in silicon–Part II: Generation and long-time relaxation of damage structure A Jay, M Raine, N Richard, N Mousseau, V Goiffon, A Hémeryck, ... IEEE Transactions on Nuclear Science 64 (1), 141-148, 2016 | 71 | 2016 |
| Simulation of single particle displacement damage in silicon–part I: global approach and primary interaction simulation M Raine, A Jay, N Richard, V Goiffon, S Girard, M Gaillardin, P Paillet IEEE Transactions on Nuclear Science 64 (1), 133-140, 2016 | 43 | 2016 |
| Carbon-rich icosahedral boron carbide designed from first principles A Jay, N Vast, J Sjakste, OH Duparc Applied Physics Letters 105 (3), 2014 | 36 | 2014 |
| Finding reaction pathways and transition states: r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches A Jay, C Huet, N Salles, M Gunde, L Martin-Samos, N Richard, G Landa, ... Journal of Chemical Theory and Computation 16 (10), 6726-6734, 2020 | 34 | 2020 |
| Theoretical phase diagram of boron carbide from ambient to high pressure and temperature A Jay, O Hardouin Duparc, J Sjakste, N Vast Journal of Applied Physics 125 (18), 2019 | 27 | 2019 |
| Radiation-induced variable retention time in dynamic random access memories V Goiffon, T Bilba, T Deladerriere, G Beaugendre, A Le Roch, A Dion, ... IEEE Transactions on Nuclear Science 67 (1), 234-244, 2019 | 23 | 2019 |
| Simulation of single-particle displacement damage in silicon—Part III: First principle characterization of defect properties A Jay, A Hémeryck, N Richard, L Martin-Samos, M Raine, A Le Roch, ... IEEE Transactions on Nuclear Science 65 (2), 724-731, 2018 | 23 | 2018 |
| Understanding first-order Raman spectra of boron carbides across the homogeneity range G Roma, K Gillet, A Jay, N Vast, G Gutierrez Physical Review Materials 5 (6), 063601, 2021 | 20 | 2021 |
| Parametric study of the Two-Temperature Model for Molecular Dynamics simulations of collisions cascades in Si and Ge T Jarrin, A Jay, A Hémeryck, N Richard Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2020 | 14 | 2020 |
| A comprehensive theoretical picture of e centers in silicon: From optical properties to vacancy-mediated dopant diffusion G Herrero-Saboya, L Martin-Samos, A Jay, A Hémeryck, N Richard Journal of Applied Physics 127 (8), 2020 | 12 | 2020 |
| Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage … T Jarrin, A Jay, M Raine, N Mousseau, A Hémeryck, N Richard IEEE Transactions on Nuclear Science 67 (7), 1273-1283, 2020 | 11 | 2020 |
| Activation–Relaxation Technique: An efficient way to find minima and saddle points of potential energy surfaces A Jay, M Gunde, N Salles, M Poberžnik, L Martin-Samos, N Richard, ... Computational Materials Science 209, 111363, 2022 | 10 | 2022 |
| Reply to “Comment on ‘Understanding first-order Raman spectra of boron carbides across the homogeneity range’” G Roma, A Jay, N Vast, OH Duparc, G Gutierrez Physical Review Materials 6 (1), 016602, 2022 | 7 | 2022 |
| Conception in silico d'une nouvelle phase de carbure de bore A Jay Ecole Doctorale Polytechnique, 2015 | 7 | 2015 |
| Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime A Chakraborti, A Jay, OH Duparc, J Sjakste, K Béneut, N Vast, ... Acta Materialia 226, 117553, 2022 | 6 | 2022 |
| Clusters of defects as a possible origin of random telegraph signal in imager devices: a dft based study A Jay, A Hémeryck, F Cristiano, D Rideau, PL Julliard, V Goiffon, ... 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 6 | 2021 |
| Theoretical Raman spectrum of boron carbide B4. 3C under pressure A Jay, OH Duparc, J Sjakste, N Vast Acta Materialia 255, 119085, 2023 | 4 | 2023 |
| Coping with the stochasticity of collision cascades in Molecular Dynamics simulations T Jarrin, A Jay, N Richard, A Hémeryck Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2021 | 4 | 2021 |
| Experimental evaluation of convex difference surface for planar joint study B Alex, J Antoine, D Philippe | 2 | 2010 |
| A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process CJ Donoso, A Jay, J Lam, J Müller, G Larrieu, G Landa, C Bongiorno, ... Applied Surface Science 631, 157563, 2023 | 1 | 2023 |
Anne HémeryckLAAS-CNRSVerified email at laas.fr
