| Electrical conductivity improvement of Fe doped ZnO nanopowders H Saadi, FIH Rhouma, Z Benzarti, Z Bougrioua, S Guermazi, K Khirouni Materials Research Bulletin 129, 110884, 2020 | 72 | 2020 |
| Magnesium diffusion profile in GaN grown by MOVPE Z Benzarti, I Halidou, Z Bougrioua, T Boufaden, B El Jani Journal of crystal growth 310 (14), 3274-3277, 2008 | 50 | 2008 |
| Electrical and optical properties of Cd1− xZnxS (0⩽ x⩽ 0.18) grown by chemical bath deposition Z Khefacha, Z Benzarti, M Mnari, M Dachraoui Journal of crystal growth 260 (3-4), 400-409, 2004 | 44 | 2004 |
| Heavily silicon-doped GaN by MOVPE I Halidou, Z Benzarti, Z Chine, T Boufaden, B El Jani Microelectronics journal 32 (2), 137-142, 2001 | 41 | 2001 |
| Enhancing the electrical conductivity and the dielectric features of ZnO nanoparticles through Co doping effect for energy storage applications H Saadi, Z Benzarti, P Sanguino, J Pina, N Abdelmoula, JSS de Melo Journal of Materials Science: Materials in Electronics 34 (2), 116, 2023 | 37 | 2023 |
| Effect of SiN treatment on GaN epilayer quality Z Benzarti, I Halidou, T Boufaden, B El Jani, S Juillaguet, M Ramonda physica status solidi (a) 201 (3), 502-508, 2004 | 37 | 2004 |
| Enhancing the electrical and dielectric properties of ZnO nanoparticles through Fe doping for electric storage applications H Saadi, Z Benzarti, FIH Rhouma, P Sanguino, S Guermazi, K Khirouni, ... Journal of Materials Science: Materials in Electronics 32, 1536-1556, 2021 | 36 | 2021 |
| Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire A Bchetnia, A Touré, TA Lafford, Z Benzarti, I Halidou, MM Habchi, ... Journal of crystal growth 308 (2), 283-289, 2007 | 34 | 2007 |
| Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment I Halidou, Z Benzarti, T Boufaden, B El Jani, S Juillaguet, M Ramonda Materials Science and Engineering: B 110 (3), 251-255, 2004 | 34 | 2004 |
| Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE M Bouzidi, Z Benzarti, I Halidou, S Soltani, Z Chine, BEL Jani Materials Science in Semiconductor Processing 42, 273-276, 2016 | 27 | 2016 |
| Improving the optical, electrical and dielectric characteristics of ZnO nanoparticles through (Fe+ Al) addition for optoelectronic applications H Saadi, Z Benzarti, P Sanguino, Y Hadouch, D Mezzane, K Khirouni, ... Applied Physics A 128 (8), 691, 2022 | 22 | 2022 |
| Silicon effect on GaN surface morphology Z Benzarti, I Halidou, O Tottereau, T Boufaden, B El Jani Microelectronics journal 33 (11), 995-998, 2002 | 22 | 2002 |
| Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs Z Benzarti, T Sekrafi, Z Bougrioua, A Khalfallah, B El Jani Journal of Electronic Materials 46, 4312-4320, 2017 | 19 | 2017 |
| Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE M Bouzidi, Z Benzarti, I Halidou, Z Chine, A Bchetnia, B El Jani Superlattices and Microstructures 84, 13-23, 2015 | 17 | 2015 |
| Study of surface and interface roughness of GaN-based films using spectral reflectance measurements Z Benzarti, M Khelifi, I Halidou, B El Jani Journal of Electronic Materials 44, 3243-3252, 2015 | 15 | 2015 |
| Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric‐pressure MOVPE A Touré, I Halidou, Z Benzarti, A Fouzri, A Bchetnia, B El Jani physica status solidi (a) 209 (5), 977-983, 2012 | 15 | 2012 |
| GaN property evolution at all stages of MOVPE Si/N treatment growth I Halidou, Z Benzarti, H Fitouri, W Fathallah, BE Jani physica status solidi c 4 (1), 129-132, 2007 | 15 | 2007 |
| Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth I Halidou, Z Benzarti, Z Bougrioua, T Boufaden, B El Jani Superlattices and Microstructures 40 (4-6), 490-495, 2006 | 15 | 2006 |
| Laser‐reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: study and simulation H Fitouri, Z Benzarti, I Halidou, T Boufaden, BE Jani physica status solidi (a) 202 (13), 2467-2473, 2005 | 14 | 2005 |
| Comparative study on the nanomechanical behavior and physical properties influenced by the epitaxial growth mechanisms of GaN thin films N Boughrara, Z Benzarti, A Khalfallah, M Evaristo, A Cavaleiro Applied Surface Science 579, 152188, 2022 | 12 | 2022 |
