M. Fernando Gonzalez-Zalba
M. Fernando Gonzalez-Zalba
Quantum Motion Technologies
Verified email at cam.ac.uk - Homepage
Cited by
Cited by
Probing the limits of gate-based charge sensing
MF Gonzalez-Zalba, S Barraud, AJ Ferguson, AC Betz
Nature communications 6 (1), 1-8, 2015
Gate-based single-shot readout of spins in silicon
A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ...
Nature nanotechnology 14 (5), 437-441, 2019
Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor
AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ...
Nano letters 15 (7), 4622-4627, 2015
Gate-sensing coherent charge oscillations in a silicon field-effect transistor
MF Gonzalez-Zalba, SN Shevchenko, S Barraud, JR Johansson, ...
Nano letters 16 (3), 1614-1619, 2016
Quantum and tunneling capacitance in charge and spin qubits
R Mizuta, R Otxoa, A Betz, MF Gonzalez-Zalba
Physical Review B 95, 045414, 2017
Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
M Urdampilleta, A Chatterjee, CC Lo, T Kobayashi, J Mansir, S Barraud, ...
Physical Review X 5 (3), 031024, 2015
Engineering the photoresponse of InAs nanowires
JA Alexander-Webber, CK Groschner, AA Sagade, G Tainter, ...
ACS applied materials & interfaces 9 (50), 43993-44000, 2017
Radio-frequency capacitive gate-based sensing
I Ahmed, J Haigh, S Schaal, S Barraud, Y Zhu, C Lee, M Amado, ...
Physical Review Applied 10, 014018, 2018
Hybrid optical–electrical detection of donor electron spins with bound excitons in silicon
CC Lo, M Urdampilleta, P Ross, MF Gonzalez-Zalba, J Mansir, SA Lyon, ...
Nature materials 14 (5), 490-494, 2015
An exchange-coupled donor molecule in silicon
MF González-Zalba, A Saraiva, MJ Calderón, D Heiss, B Koiller, ...
Nano letters 14 (10), 5672-5676, 2014
A silicon-based single-electron interferometer coupled to a fermionic sea
A Chatterjee, SN Shevchenko, S Barraud, RM Otxoa, F Nori, JJL Morton, ...
Physical Review B 97 (4), 045405, 2018
A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, ...
Nature Electronics 2 (6), 236-242, 2019
Quantum information processing
A Betz, MF Gonzalez-Zalba
US Patent 9,773,208, 2017
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
AC Betz, MLV Tagliaferri, M Vinet, M Broström, M Sanquer, AJ Ferguson, ...
Applied Physics Letters 108 (20), 203108, 2016
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba
Applied Physics Letters 110 (21), 212101, 2017
Ambipolar quantum dots in intrinsic silicon
AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson
Applied Physics Letters 105 (15), 153113, 2014
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
AC Betz, S Barraud, Q Wilmart, B Placais, X Jehl, M Sanquer, ...
Applied Physics Letters 104 (4), 043106, 2014
Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
S Schaal, I Ahmed, JA Haigh, L Hutin, B Bertrand, S Barraud, M Vinet, ...
https://arxiv.org/abs/1907.09429, 2019
Electric-field tuning of the valley splitting in silicon corner dots
DJ Ibberson, L Bourdet, JC Abadillo-Uriel, I Ahmed, S Barraud, ...
Applied Physics Letters 113 (5), 053104, 2018
Conditional dispersive readout of a CMOS single-electron memory cell
S Schaal, S Barraud, JJL Morton, MF Gonzalez-Zalba
Physical Review Applied 9 (5), 054016, 2018
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