| Probing the limits of gate-based charge sensing MF Gonzalez-Zalba, S Barraud, AJ Ferguson, AC Betz Nature communications 6 (1), 1-8, 2015 | 119 | 2015 |
| Gate-based single-shot readout of spins in silicon A West, B Hensen, A Jouan, T Tanttu, CH Yang, A Rossi, ... Nature nanotechnology 14 (5), 437-441, 2019 | 70 | 2019 |
| Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ... Nano letters 15 (7), 4622-4627, 2015 | 65 | 2015 |
| Gate-sensing coherent charge oscillations in a silicon field-effect transistor MF Gonzalez-Zalba, SN Shevchenko, S Barraud, JR Johansson, ... Nano letters 16 (3), 1614-1619, 2016 | 57 | 2016 |
| Quantum and tunneling capacitance in charge and spin qubits R Mizuta, R Otxoa, A Betz, MF Gonzalez-Zalba Physical Review B 95, 045414, 2017 | 47 | 2017 |
| Charge dynamics and spin blockade in a hybrid double quantum dot in silicon M Urdampilleta, A Chatterjee, CC Lo, T Kobayashi, J Mansir, S Barraud, ... Physical Review X 5 (3), 031024, 2015 | 45 | 2015 |
| Engineering the photoresponse of InAs nanowires JA Alexander-Webber, CK Groschner, AA Sagade, G Tainter, ... ACS applied materials & interfaces 9 (50), 43993-44000, 2017 | 42 | 2017 |
| Radio-frequency capacitive gate-based sensing I Ahmed, J Haigh, S Schaal, S Barraud, Y Zhu, C Lee, M Amado, ... Physical Review Applied 10, 014018, 2018 | 39 | 2018 |
| Hybrid optical–electrical detection of donor electron spins with bound excitons in silicon CC Lo, M Urdampilleta, P Ross, MF Gonzalez-Zalba, J Mansir, SA Lyon, ... Nature materials 14 (5), 490-494, 2015 | 39 | 2015 |
| An exchange-coupled donor molecule in silicon MF González-Zalba, A Saraiva, MJ Calderón, D Heiss, B Koiller, ... Nano letters 14 (10), 5672-5676, 2014 | 39 | 2014 |
| A silicon-based single-electron interferometer coupled to a fermionic sea A Chatterjee, SN Shevchenko, S Barraud, RM Otxoa, F Nori, JJL Morton, ... Physical Review B 97 (4), 045405, 2018 | 25 | 2018 |
| A CMOS dynamic random access architecture for radio-frequency readout of quantum devices S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, ... Nature Electronics 2 (6), 236-242, 2019 | 24 | 2019 |
| Quantum information processing A Betz, MF Gonzalez-Zalba US Patent 9,773,208, 2017 | 23 | 2017 |
| Reconfigurable quadruple quantum dots in a silicon nanowire transistor AC Betz, MLV Tagliaferri, M Vinet, M Broström, M Sanquer, AJ Ferguson, ... Applied Physics Letters 108 (20), 203108, 2016 | 22 | 2016 |
| Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba Applied Physics Letters 110 (21), 212101, 2017 | 21 | 2017 |
| Ambipolar quantum dots in intrinsic silicon AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson Applied Physics Letters 105 (15), 153113, 2014 | 19 | 2014 |
| High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors AC Betz, S Barraud, Q Wilmart, B Placais, X Jehl, M Sanquer, ... Applied Physics Letters 104 (4), 043106, 2014 | 19 | 2014 |
| Fast gate-based readout of silicon quantum dots using Josephson parametric amplification S Schaal, I Ahmed, JA Haigh, L Hutin, B Bertrand, S Barraud, M Vinet, ... https://arxiv.org/abs/1907.09429, 2019 | 18 | 2019 |
| Electric-field tuning of the valley splitting in silicon corner dots DJ Ibberson, L Bourdet, JC Abadillo-Uriel, I Ahmed, S Barraud, ... Applied Physics Letters 113 (5), 053104, 2018 | 17 | 2018 |
| Conditional dispersive readout of a CMOS single-electron memory cell S Schaal, S Barraud, JJL Morton, MF Gonzalez-Zalba Physical Review Applied 9 (5), 054016, 2018 | 17* | 2018 |
Sylvain BARRAUDCEA-LETI, Minatec CampusVerified email at cea.fr
