עקוב אחר
Jorg Scholvin
Jorg Scholvin
כתובת אימייל מאומתת בדומיין mit.edu
כותרת
צוטט על ידי
צוטט על ידי
שנה
Cell diversity and network dynamics in photosensitive human brain organoids
G Quadrato, T Nguyen, EZ Macosko, JL Sherwood, S Min Yang, ...
Nature 545 (7652), 48-53, 2017
10642017
Three-dimensional multiwaveguide probe array for light delivery to distributed brain circuits
AN Zorzos, J Scholvin, ES Boyden, CG Fonstad
Optics letters 37 (23), 4841-4843, 2012
2072012
Close-packed silicon microelectrodes for scalable spatially oversampled neural recording
J Scholvin, JP Kinney, JG Bernstein, C Moore-Kochlacs, N Kopell, ...
IEEE Transactions on Biomedical Engineering 63 (1), 120-130, 2015
2062015
A through-wafer interconnect in silicon for RFICs
JH Wu, J Scholvin, JA del Alamo
IEEE Transactions on Electron Devices 51 (11), 1765-1771, 2004
942004
A Faraday cage isolation structure for substrate crosstalk suppression
JH Wu, J Scholvin, JA del Alamo, KA Jenkins
IEEE Microwave and Wireless Components Letters 11 (10), 410-412, 2001
742001
Methods and apparatus for high-throughput neural screening
E Boyden, J Bernstein, C Wentz, GT Franzesi, M Baratta, B Allen, ...
US Patent 8,910,638, 2014
732014
Multi-level interconnections for an integrated circuit chip
DR Greenberg, JJ Pekarik, J Scholvin
US Patent 7,414,275, 2008
46*2008
Multi-level interconnections for an integrated circuit chip
DR Greenberg, JJ Pekarik, J Scholvin
US Patent 7,414,275, 2008
46*2008
Sub-40 nm SOI V-groove n-MOSFETs
J Appenzeller, R Martel, P Avouris, J Knoch, J Scholvin, JA del Alamo, ...
IEEE Electron Device Letters 23 (2), 100-102, 2002
442002
Fundamental power and frequency limits of deeply-scaled CMOS for RF power applications
J Scholvin, DR Greenberg, JA del Alamo
2006 International Electron Devices Meeting, 1-4, 2006
382006
RF power potential of 90 nm CMOS: device options, performance, and reliability
J Scholvin, DR Greenberg, JA del Alamo
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
252004
An insulator-lined silicon substrate-via technology with high aspect ratio
JH Wu, J Scholvin, JA Del Alamo
IEEE Transactions on Electron Devices 48 (9), 2181-2183, 2001
252001
Automated in vivo patch-clamp evaluation of extracellular multielectrode array spike recording capability
BD Allen, C Moore-Kochlacs, JG Bernstein, JP Kinney, J Scholvin, ...
Journal of neurophysiology 120 (5), 2182-2200, 2018
222018
A direct-to-drive neural data acquisition system
JP Kinney, JG Bernstein, AJ Meyer, JB Barber, M Bolivar, B Newbold, ...
Frontiers in neural circuits 9, 46, 2015
222015
Performance and limitations of 65 nm CMOS for integrated RF power applications
J Scholvin, DR Greenberg, JA del Alamo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
212005
The marshall grazing incidence x-ray spectrometer (magixs)
K Kobayashi, AR Winebarger, S Savage, P Champey, PN Cheimets, ...
Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray 10699 …, 2018
182018
Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI
J Scholvin, JG Fiorenza, JA del Alamo
IEEE transactions on electron devices 53 (7), 1705-1711, 2006
122006
Technologies for RF power LDMOSFETs beyond 2 GHz: metal/poly-Si damascene gates and low-loss substrates
JG Fiorenza, J Scholvin, JA del Alamo
Digest. International Electron Devices Meeting,, 463-466, 2002
102002
A metal/polysilicon damascene gate technology for RF power LDMOSFETs
JG Fiorenza, J Scholvin, JA del Alamo
IEEE Electron Device Letters 24 (11), 698-700, 2003
82003
Heterogeneous neural amplifier integration for scalable extracellular microelectrodes
J Scholvin, JP Kinney, JG Bernstein, C Moore-Kochlacs, NJ Kopell, ...
2016 38th Annual International Conference of the IEEE Engineering in …, 2016
72016
המערכת אינה יכולה לבצע את הפעולה כעת. נסה שוב מאוחר יותר.
מאמרים 1–20