| A silicon carbide room-temperature single-photon source S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ... Nature materials 13 (2), 151-156, 2014 | 623 | 2014 |
| Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ... Physical Review X 7 (2), 021046, 2017 | 258 | 2017 |
| Electrically and mechanically tunable electron spins in silicon carbide color centers AL Falk, PV Klimov, BB Buckley, V Ivády, IA Abrikosov, G Calusine, ... Physical review letters 112 (18), 187601, 2014 | 224 | 2014 |
| Pressure and temperature dependence of the zero-field splitting in the ground state of NV centers in diamond: A first-principles study V Ivády, T Simon, JR Maze, IA Abrikosov, A Gali Physical Review B 90 (23), 235205, 2014 | 168 | 2014 |
| Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride V Ivády, G Barcza, G Thiering, S Li, H Hamdi, JP Chou, Ö Legeza, A Gali npj Computational Materials 6 (1), 41, 2020 | 165 | 2020 |
| Optical polarization of nuclear spins in silicon carbide AL Falk, PV Klimov, V Ivády, K Szász, DJ Christle, WF Koehl, Á Gali, ... Physical review letters 114 (24), 247603, 2015 | 158 | 2015 |
| Identification of Si-vacancy related room-temperature qubits in silicon carbide V Ivády, J Davidsson, NT Son, T Ohshima, IA Abrikosov, A Gali Physical Review B 96 (16), 161114, 2017 | 107 | 2017 |
| Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide V Ivády, K Szász, AL Falk, PV Klimov, DJ Christle, E Janzén, IA Abrikosov, ... Physical Review B 92 (11), 115206, 2015 | 95 | 2015 |
| First principles calculation of spin-related quantities for point defect qubit research V Ivády, IA Abrikosov, A Gali npj Computational Materials 4 (1), 76, 2018 | 91 | 2018 |
| Ab initio description of highly correlated states in defects for realizing quantum bits M Bockstedte, F Schütz, T Garratt, V Ivády, A Gali npj Quantum Materials 3 (1), 31, 2018 | 87 | 2018 |
| Dirac points with giant spin-orbit splitting in the electronic structure of two-dimensional transition-metal carbides H Fashandi, V Ivády, P Eklund, AL Spetz, MI Katsnelson, IA Abrikosov Physical Review B 92 (15), 155142, 2015 | 79 | 2015 |
| Electrically driven optical interferometry with spins in silicon carbide KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, ... Science Advances 5 (11), eaay0527, 2019 | 77 | 2019 |
| Spin and photophysics of carbon-antisite vacancy defect in silicon carbide: A potential quantum bit K Szász, V Ivády, IA Abrikosov, E Janzén, M Bockstedte, A Gali Physical Review B 91 (12), 121201, 2015 | 72 | 2015 |
| First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC J Davidsson, V Ivády, R Armiento, NT Son, A Gali, IA Abrikosov New Journal of Physics 20 (2), 023035, 2018 | 70 | 2018 |
| Theoretical unification of hybrid-DFT and methods for the treatment of localized orbitals V Ivády, R Armiento, K Szász, E Janzén, A Gali, IA Abrikosov Physical Review B 90 (3), 035146, 2014 | 69 | 2014 |
| Stabilization of point-defect spin qubits by quantum wells V Ivády, J Davidsson, N Delegan, AL Falk, PV Klimov, SJ Whiteley, ... Nature communications 10 (1), 5607, 2019 | 61 | 2019 |
| Decoherence of V spin defects in monoisotopic hexagonal boron nitride A Haykal, R Tanos, N Minotto, A Durand, F Fabre, J Li, JH Edgar, V Ivady, ... Nature Communications 13 (1), 4347, 2022 | 54 | 2022 |
| Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins M Gulka, D Wirtitsch, V Ivády, J Vodnik, J Hruby, G Magchiels, ... Nature Communications 12 (1), 4421, 2021 | 50 | 2021 |
| Identification of divacancy and silicon vacancy qubits in 6H-SiC J Davidsson, V Ivády, R Armiento, T Ohshima, NT Son, A Gali, ... Applied Physics Letters 114 (11), 2019 | 49 | 2019 |
| Role of screening in the density functional applied to transition-metal defects in semiconductors V Ivády, IA Abrikosov, E Janzén, A Gali Physical Review B—Condensed Matter and Materials Physics 87 (20), 205201, 2013 | 48 | 2013 |
Gali ÁdámWigner Research Centre for Physics, Hungarian Academy of SciencesVerified email at wigner.mta.hu
