Augustine fletcher
Augustine fletcher
Assistant professorkarunya university
Verified email at karunya.edu
Title
Cited by
Cited by
Year
A survey of Gallium Nitride (GaN) HEMT for RF and high power applications
DN A.S.Augustine Fletcher
Superlattice and microstructures 109 (-), 519-537, 2017
942017
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
302018
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
AEU-International Journal of Electronics and Communications 99, 325-330, 2019
292019
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
172019
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ...
Microelectronics Journal 92, 104604, 2019
152019
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
AS Augustine Fletcher, D Nirmal, L Arivazhagan, J Ajayan, A Varghese
International Journal of RF and Microwave Computer‐Aided Engineering 30 (2 …, 2020
142020
A survey of Gallium Nitride HEMT for RF and high power application
AS Augustine Fletcher, D Nirmal
Superlattice Microst 109, 519-537, 2017
102017
An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
Silicon 13 (5), 1591-1598, 2021
42021
Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs
J Ajayan, D Nirmal, D Kurian, P Mohankumar, L Arivazhagan, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2019
22019
Design and modeling of HEMT using field plate technique
MB Sathish, ASA Fletcher
2017 International Conference on Innovations in Electrical, Electronics …, 2017
22017
A novel hybrid multiple mode power gating
PK MP, ASA Fletcher
2014 International Conference on Electronics and Communication Systems …, 2014
22014
A Survey on Leakage Power Reduction Techniques by Using Power Gating Methodology
PK MP, ASA Fletcher
International Journal of Engineering Trends and Technology (IJETT)–Volume 9, 0
1
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
KH Hamza, D Nirmal, ASA Fletcher, L Arivazhagan, J Ajayan, R Natarajan
AEU-International Journal of Electronics and Communications 136, 153774, 2021
2021
60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan, P Murugapandiyan
2021
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal, 105141, 2021
2021
6 GHz GaN HEMT Linear Power Amplifier
HK Husna, D Nirmal, SMG Raj, J Ajayan, L Arivazhagan, ASA Fletcher
2021 3rd International Conference on Signal Processing and Communication …, 2021
2021
Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications
ASA Fletcher, D Nirmal, L Arivazhagan, J Ajayan
2019 2nd International Conference on Signal Processing and Communication …, 2019
2019
Design and Modeling of HEMT Using Field Plate
MB Sathish, ASA Fletcher
Sindrome da MCS
DINSADE DI, S CHIMICHE
A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques
PK MP, ASA Fletcher
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