Arun Samuel
Arun Samuel
Verified email at nec.edu.in
Title
Cited by
Cited by
Year
Analytical modelling and simulation of single-gate SOI TFET for low-power applications
TS Samuel, NB Balamurugan, S Bhuvaneswari, D Sharmila, ...
INTERNATIONAL JOURNAL OF ELECTRONICS 101 (6), 779-788, 2014
39*2014
A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications
S Darwin, TSA Samuel
silicon 12 (2), 393-403, 2020
212020
An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications
TS Arun Samuel, NB Balamurugan
Journal of electrical engineering and technology 9 (1), 247-253, 2014
172014
A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current
P Vanitha, TSA Samuel, D Nirmal
AEU-International Journal of Electronics and Communications 99, 34-39, 2019
162019
An analytical modeling and simulation of dual material double gate tunnel field effect transistor for low power applications
TSA Samuel, NB Balamurugan
Journal of Electrical Engineering & Technology 9 (1), 247-253, 2014
162014
Analytical modeling and simulation of dual material gate tunnel field effect transistors
TS Samuel, NB Balamurugan, S Sibitha, R Saranya, D Vanisri
Journal of Electrical Engineering and Technology 8 (6), 1481-1486, 2013
152013
IoT BASED MILK MONITORING SYSTEM FOR DETECTION OF MILK ADULTERATION
G Rajakumar, TA Kumar, TSA Samuel, E Muthu
International Journal of Pure and Applied Mathematics 118 (9), 21-32, 2018
122018
Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric
P Vimala, TSA Samuel, D Nirmal, AK Panda
Solid State Electronics Letters 1 (2), 64-72, 2019
112019
Impact of uniform and non-uniform doping variations for ultrathin body junctionless FinFETs
S Manikandan, NB Balamurugan, TSA Samuel
Materials Science in Semiconductor Processing 104, 104653, 2019
92019
Analytical modeling and simulation of germanium single gate silicon on insulator TFET
TSA Samuel, NB Balamurugan
Journal of Semiconductors 35 (3), 034002, 2014
92014
Analytical Surface potential model with TCAD simulation verification for evaluation of Surrounding Gate TFET
TS Samuel, NB Balamurugan, T Niranjana, B Samyuktha
Journal of Electrical Engineering and Technology 9 (2), 655-661, 2014
92014
Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation
S Komalavalli, TSA Samuel, P Vimala
AEU-International Journal of Electronics and Communications 110, 152842, 2019
82019
Mathematical modeling of junctionless triple material double gate MOSFET for low power applications
S Darwin, TS Samuel
Journal of Nano Research 56, 71-79, 2019
62019
Performance investigation of gate engineered tri-gate SOI TFETs with different high-k dielectric materials for low power applications
P Vimala, TSA Samuel, MK Pandian
Silicon 12 (8), 1819-1829, 2020
52020
Analytical Modelling and simulation of triple material quadruple gate tunnel field effect transistors
TS Samuel, S Komalavalli
Journal of nano research 54, 146-157, 2018
52018
A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
C Usha, P Vimala, TSA Samuel, MK Pandian
Journal of Computational Electronics 19 (3), 1144-1153, 2020
42020
Improved dynamic response of isolated full bridge DC to DC converter using BATA optimization tuned fuzzy sliding mode controller for solar applications
R Anand, TSA Samuel, PM Mary
international journal of hydrogen energy 42 (34), 21648-21658, 2017
42017
Impact of two gate oxide with no junction metal oxide semiconductor field effect transistor-an analytical model
S Darwin, TSA Samuel, P Vimala
Physica E: Low-dimensional Systems and Nanostructures 118, 113803, 2020
32020
Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure
V Palanichamy, N Kulkarni, AS Thankamony Sarasam
International Journal of Nano Dimension 10 (4), 368-374, 2019
32019
A Simulation Study on the Impact of InP Barrier on InGaAs/InP Hetero Junction Gate All around MOSFET
P Vimala, TS Samuel
Journal of Nano Research 60, 113-123, 2019
32019
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