| Engineered substrates for future More Moore and More than Moore integrated devices L Clavelier, C Deguet, L Di Cioccio, E Augendre, A Brugere, P Gueguen, ... 2010 International Electron Devices Meeting, 2.6. 1-2.6. 4, 2010 | 254 | 2010 |
| Multiple gate devices: advantages and challenges T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, T Ernst, B Previtali, ... Microelectronic Engineering 80, 378-385, 2005 | 157 | 2005 |
| 3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015 | 152 | 2015 |
| Bonded planar double-metal-gate NMOS transistors down to 10 nm M Vinet, T Poiroux, J Widiez, J Lolivier, B Previtali, C Vizioz, B Guillaumot, ... IEEE Electron Device Letters 26 (5), 317-319, 2005 | 147 | 2005 |
| Lasing in strained germanium microbridges FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ... Nature communications 10 (1), 2724, 2019 | 126 | 2019 |
| Experimental evaluation of gate architecture influence on DG SOI MOSFETs performance J Widiez, J Lolivier, M Vinet, T Poiroux, B Previtali, F Daugé, M Mouis, ... IEEE Transactions on Electron Devices 52 (8), 1772-1779, 2005 | 103 | 2005 |
| 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 2015 | 89 | 2015 |
| Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications F Allibert, J Widiez US Patent 9,129,800, 2015 | 85 | 2015 |
| Germanium based photonic components toward a full silicon/germanium photonic platform V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ... Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017 | 74 | 2017 |
| Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS photonics 3 (10), 1907-1911, 2016 | 70 | 2016 |
| Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ... Journal of Applied Physics 121 (5), 2017 | 53 | 2017 |
| Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 2016 | 50 | 2016 |
| Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate double-gate transistors V Barral, T Poiroux, M Vinet, J Widiez, B Previtali, P Grosgeorges, ... Solid-State Electronics 51 (4), 537-542, 2007 | 45 | 2007 |
| Multigate silicon MOSFETs for 45 nm node and beyond T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, B Previtali, T Ernst, ... Solid-state electronics 50 (1), 18-23, 2006 | 45 | 2006 |
| Silicon-On-Diamond layer integration by wafer bonding technology M Rabarot, J Widiez, S Saada, JP Mazellier, C Lecouvey, JC Roussin, ... Diamond and related materials 19 (7-9), 796-805, 2010 | 40 | 2010 |
| Internal photoemission over HfO2 and Hf (1-x) SixO2 high-k insulating barriers: Band offset and interfacial dipole characterization J Widiez, K Kita, K Tomida, T Nishimura, A Toriumi Japanese journal of applied physics 47 (4S), 2410, 2008 | 36 | 2008 |
| Experimental Comparison Between Sub-0.1-Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility J Widiez, T Poiroux, M Vinet, M Mouis, S Deleonibus IEEE transactions on nanotechnology 5 (6), 643-648, 2006 | 36 | 2006 |
| Experimental gate misalignment analysis on double gate SOI MOSFETs J Widiez, F Dauge, M Vinet, T Poiroux, B Previtali, M Mouis, S Deleonibus 2004 IEEE International SOI Conference (IEEE Cat. No. 04CH37573), 185-186, 2004 | 35 | 2004 |
| Spin transport in p-type germanium F Rortais, S Oyarzún, F Bottegoni, JC Rojas-Sánchez, P Laczkowski, ... Journal of Physics: Condensed Matter 28 (16), 165801, 2016 | 33 | 2016 |
| SOI-type bonded structures for advanced technology nodes J Widiez, JM Hartmann, F Mazen, S Sollier, C Veytizou, Y Bogumilowicz, ... ECS Transactions 64 (5), 35, 2014 | 31 | 2014 |
