Vladimir Dubrovskii
Vladimir Dubrovskii
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Growth kinetics and crystal structure of semiconductor nanowires
VG Dubrovskii, NV Sibirev, JC Harmand, F Glas
Physical Review B 78 (23), 235301, 2008
Nucleation theory and growth of nanostructures
VG Dubrovskii
Springer, 2014
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ...
Physical review B 71 (20), 205325, 2005
Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy
GE Cirlin, VG Dubrovskii, YB Samsonenko, AD Bouravleuv, K Durose, ...
Physical Review B 82 (3), 035302, 2010
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov
Physical Review E 73 (2), 021603, 2006
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B 79 (20), 205316, 2009
Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
VG Dubrovskii, NV Sibirev
Physical review B 77 (3), 035414, 2008
Semiconductor nanowhiskers: synthesis, properties, and applications
VG Dubrovskii, GE Cirlin, VM Ustinov
Semiconductors 43, 1539-1584, 2009
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ...
physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009
Kinetics of the initial stage of coherent island formation in heteroepitaxial systems
VG Dubrovskii, GE Cirlin, VM Ustinov
Physical Review B 68 (7), 075409, 2003
Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires
VG Dubrovskii, NV Sibirev
Physical Review E 70 (3), 031604, 2004
Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
VG Dubrovskii, T Xu, AD Álvarez, SR Plissard, P Caroff, F Glas, ...
Nano letters 15 (8), 5580-5584, 2015
Template-assisted scalable nanowire networks
M Friedl, K Cerveny, P Weigele, G Tütüncüoglu, S Martí-Sánchez, ...
Nano letters 18 (4), 2666-2671, 2018
Role of nonlinear effects in nanowire growth and crystal phase
VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ...
Physical Review B 80 (20), 205305, 2009
General form of the dependences of nanowire growth rate on the nanowire radius
VG Dubrovskii, NV Sibirev
Journal of crystal growth 304 (2), 504-513, 2007
Phase selection in self-catalyzed GaAs nanowires
F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ...
Nano letters 20 (3), 1669-1675, 2020
Quantitative description for the growth rate of self-induced GaN nanowires
V Consonni, VG Dubrovskii, A Trampert, L Geelhaar, H Riechert
Physical Review B 85 (15), 155313, 2012
Полупроводниковые нитевидные нанокристаллы: синтез, свойства, применения О б з о р
ВГ Дубровский, ГЭ Цырлин, ВМ Устинов
Физика и техника полупроводников 43 (12), 1585-1628, 2009
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