Follow
Niklas Rorsman
Niklas Rorsman
Verified email at chalmers.se
Title
Cited by
Cited by
Year
A new empirical nonlinear model for HEMT and MESFET devices
I Angelov, H Zirath, N Rosman
IEEE Transactions on Microwave Theory and Techniques 40 (12), 2258-2266, 1992
7851992
Accurate small-signal modeling of HFET's for millimeter-wave applications
N Rorsman, M Garcia, C Karlsson, H Zirath
IEEE Transactions on Microwave Theory and Techniques 44 (3), 432-437, 1996
2081996
An empirical table-based FET model
I Angelov, N Rorsman, J Stenarson, M Garcia, H Zirath
IEEE Transactions on Microwave Theory and Techniques 47 (12), 2350-2357, 1999
2001999
Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power
N Wadefalk, A Mellberg, I Angelov, ME Barsky, S Bui, E Choumas, ...
IEEE Transactions on Microwave Theory and Techniques 51 (6), 1705-1711, 2003
1762003
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
I Angelov, V Desmaris, K Dynefors, PA Nilsson, N Rorsman, H Zirath
European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005
1322005
A wideband and compact GaN MMIC Doherty amplifier for microwave link applications
D Gustafsson, JC Cahuana, D Kuylenstierna, I Angelov, N Rorsman, ...
IEEE Transactions on Microwave Theory and Techniques 61 (2), 922-930, 2013
1182013
Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
I Angelov, K Andersson, D Schreurs, D Xiao, N Rorsman, V Desmaris, ...
2006 Asia-Pacific Microwave Conference, 279-282, 2006
1172006
Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs
A Malmros, H Blanck, N Rorsman
Semiconductor science and technology 26 (7), 075006, 2011
1142011
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C (V) characterization of metal-insulator-semiconductor …
M Fagerlind, F Allerstam, EÖ Sveinbjörnsson, N Rorsman, ...
Journal of Applied Physics 108 (1), 2010
1112010
A GaN–SiC hybrid material for high-frequency and power electronics
JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ...
Applied Physics Letters 113 (4), 2018
952018
Fabrication and characterization of field-plated buried-gate SiC MESFETs
K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
942006
Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
V Desmaris, M Rudzinski, N Rorsman, PR Hageman, PK Larsen, H Zirath, ...
IEEE Transactions on electron devices 53 (9), 2413-2417, 2006
832006
Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer
S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ...
IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015
792015
An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design
M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ...
IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008
782008
Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer
O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ...
IEEE Transactions on Electron Devices 63 (1), 326-332, 2015
732015
Theory and design of class-J power amplifiers with dynamic load modulation
CM Andersson, D Gustafsson, K Yamanaka, E Kuwata, H Otsuka, ...
IEEE transactions on microwave theory and techniques 60 (12), 3778-3786, 2012
732012
Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
JY Shiu, JC Huang, V Desmaris, CT Chang, CY Lu, K Kumakura, ...
IEEE electron device letters 28 (6), 476-478, 2007
722007
Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ...
IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018
702018
Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's
N Angelov, H Zirath, A Rorsman
IEEE transactions on microwave theory and techniques 43 (5), 1046-1052, 1995
691995
1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor
J Olsson, N Rorsman, L Vestling, C Fager, J Ankarcrona, H Zirath, ...
IEEE Electron Device Letters 23 (4), 206-208, 2002
622002
The system can't perform the operation now. Try again later.
Articles 1–20