| Analysis of temperature dependent I–V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant W Mtangi, FD Auret, C Nyamhere, PJJ Van Rensburg, M Diale, ... Physica B: Condensed Matter 404 (8-11), 1092-1096, 2009 | 105 | 2009 |
| The dependence of barrier height on temperature for Pd Schottky contacts on ZnO W Mtangi, FD Auret, C Nyamhere, PJJ van Rensburg, A Chawanda, ... Physica B: Condensed Matter 404 (22), 4402-4405, 2009 | 41 | 2009 |
| Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range W Mtangi, PJJ Van Rensburg, M Diale, FD Auret, C Nyamhere, JM Nel, ... Materials Science and Engineering: B 171 (1-3), 1-4, 2010 | 35 | 2010 |
| Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range VE Gora, FD Auret, HT Danga, SM Tunhuma, C Nyamhere, E Igumbor, ... Materials Science and Engineering: B 247, 114370, 2019 | 34 | 2019 |
| Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel Journal of alloys and compounds 492 (1-2), 649-655, 2010 | 33 | 2010 |
| Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide VE Gora, A Chawanda, C Nyamhere, FD Auret, F Mazunga, T Jaure, ... Physica B: Condensed Matter 535, 333-337, 2018 | 31 | 2018 |
| Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes A Chawanda, W Mtangi, FD Auret, J Nel, C Nyamhere, M Diale Physica B: Condensed Matter 407 (10), 1574-1577, 2012 | 22 | 2012 |
| Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (1 0 0) and defects introduced during contacts fabrication and annealing process A Chawanda, C Nyamhere, FD Auret, W Mtangi, TT Hlatshwayo, M Diale, ... Physica B: Condensed Matter 404 (22), 4482-4484, 2009 | 15 | 2009 |
| Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0) A Chawanda, SMM Coelho, FD Auret, W Mtangi, C Nyamhere, JM Nel, ... Journal of alloys and compounds 513, 44-49, 2012 | 14 | 2012 |
| Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1) A Chawanda, KT Roro, FD Auret, W Mtangi, C Nyamhere, J Nel, L Leach Materials science in semiconductor processing 13 (5-6), 371-375, 2010 | 14 | 2010 |
| A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices C Nyamhere, A Scheinemann, A Schenk, A Scheit, F Olivie, F Cristiano Journal of Applied Physics 118 (18), 2015 | 13 | 2015 |
| Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si C Nyamhere, F Cristiano, F Olivie, Z Essa, E Bedel-Pereira, D Bolze, ... Journal of Applied Physics 113 (18), 2013 | 12 | 2013 |
| Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel physica status solidi c 7 (2), 248-251, 2010 | 12 | 2010 |
| Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge FD Auret, S Coelho, WE Meyer, C Nyamhere, M Hayes, JM Nel Journal of electronic materials 36, 1604-1607, 2007 | 12 | 2007 |
| Remote poultry management system for small to medium scale producers using IoT J Chigwada, F Mazunga, C Nyamhere, V Mazheke, N Taruvinga Scientific African 18, e01398, 2022 | 11 | 2022 |
| Adaptive thresholding of cnn features for maize leaf disease classification and severity estimation HD Mafukidze, G Owomugisha, D Otim, A Nechibvute, C Nyamhere, ... Applied Sciences 12 (17), 8412, 2022 | 11 | 2022 |
| Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO W Mtangi, JM Nel, FD Auret, A Chawanda, M Diale, C Nyamhere Physica B: Condensed Matter 407 (10), 1624-1627, 2012 | 11 | 2012 |
| Experimental observation of intrinsic localized modes in germanium JFR Archilla, SMM Coelho, FD Auret, C Nyamhere, VI Dubinko, ... Quodons in Mica: Nonlinear Localized Travelling Excitations in Crystals, 343-362, 2015 | 10 | 2015 |
| Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment C Nyamhere, JR Botha, A Venter Physica B: Condensed Matter 406 (11), 2273-2276, 2011 | 10 | 2011 |
| Correlation between barrier heights and ideality factors of Ni/n-Ge (100) Schottky barrier diodes A Chawanda, JM Nel, FD Auret, W Mtangi, C Nyamhere, M Diale, ... Korean Physical Society, 2010 | 9 | 2010 |
Wilbert MtangiUniversity of PretoriaVerified email at up.ac.za
