Saurabh V. Suryavanshi

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Eric PopPease-Ye Professor of Electrical Eng., Materials Science, Applied Physics, Stanford and SLACVerified email at stanford.edu
Connor J. McClellanStanford UniversityVerified email at stanford.edu
Eilam YalonTechnion, Israel Institute of TechnologyVerified email at technion.ac.il
Alexander J GabourieStanford UniversityVerified email at stanford.edu
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Verified email at csic.es
Amir Barati FarimaniAssociate Professor at Carnegie Mellon UniversityVerified email at stanford.edu
Feng XiongAssistant Professor, Department of Electrical and Computer Engineering, University of PittsburghVerified email at pitt.edu
Christopher M. NeumannIntelVerified email at intel.com
Runjie (Lily) XuStanford UniversityVerified email at apple.com
Lucian ShifrenVerified email at shifren.com
Aditya SoodAssistant Professor, Princeton UniversityVerified email at stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorVerified email at stanford.edu
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordVerified email at stanford.edu
Burak AslanAssistant Professor, Bogazici UniversityVerified email at boun.edu.tr
Sanchit DeshmukhPhD, Stanford UniversityVerified email at alumni.stanford.edu
Sam VaziriStanford UniversityVerified email at stanford.edu
Greg YericCerfe LabsVerified email at cerfelabs.com
Ankush AgarwalFacebookVerified email at fb.com
Michal Jakub MleczkoDevice Engineer, IntelVerified email at stanford.edu
Dan DessauUniversity of ColoradoVerified email at Colorado.edu

Saurabh V. Suryavanshi

Synopsys

Verified email at suryavanshi.me - Homepage

Semiconductors TCAD/EDA AI


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Energy Dissipation in Monolayer MoS₂ Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017	220	2017
Low Variability in Synthetic Monolayer MoS₂ Devices KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop ACS nano 11 (8), 8456-8463, 2017	187	2017
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices KKH Smithe, CD English, SV Suryavanshi, E Pop 2D Materials 4 (1), 011009, 2016	176	2016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	167	2017
High Current Density in Monolayer MoS₂ Doped by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021	144	2021
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS₂ KKH Smithe, CD English, SV Suryavanshi, E Pop Nano letters 18 (7), 4516-4522, 2018	141	2018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	120	2019
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities SV Suryavanshi, E Pop Journal of Applied Physics 120 (22), 2016	111	2016
Effective n-type doping of monolayer MoS₂ by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017	59	2017
Thermal boundary conductance of two-dimensional MoS2 interfaces SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop Journal of Applied Physics 126 (5), 2019	45	2019
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2 AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop 2D Materials 8 (1), 011001, 2020	39	2020
Real-time* multiple object tracking (MOT) for autonomous navigation A Agarwal, S Suryavanshi Technical report, 2017	24	2017
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 235-236, 2015	15	2015
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ... Apl Materials 10 (4), 2022	7	2022
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices KKH Smithe, CD English, SV Suryavanshi, E Pop arXiv preprint arXiv:1608.00987, 2016	6	2016
Stanford 2D Semiconductor (S2DS) Transistor Model SV Suryavanshi, E Pop Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016	4	2016
High mobility in monolayer MoS₂ devices grown by chemical vapor deposition KKH Smithe, CD English, SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 239-240, 2015	4	2015
Scaling theory of two-dimensional field effect transistors SV Suryavanshi, CD English, HSP Wong, E Pop arXiv preprint arXiv:2105.10791, 2021	3	2021
Improving electric contacts to two-dimensional semiconductors SV Suryavanshi, B Magyari-Kope, P Lim, C McClellan, KKH Smithe, ... arXiv preprint arXiv:2105.10792, 2021	3	2021
Bismuth-Doped Ferroelectric Devices L Shifren, CAP de Araujo, JB Celinska, SV Suryavanshi US Patent App. 16/248,496, 2020	3	2020

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