M. O. Manasreh
M. O. Manasreh
U of A
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Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band
DC Look, DC Walters, MO Manasreh, JR Sizelove, CE Stutz, KR Evans
Physical Review B 42 (6), 3578, 1990
Semiconductor heterojunctions and nanostructures
O Manasreh
McGraw-Hill, Inc., 2005
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 C: Observation of an EL2-like defect
MO Manasreh, DC Look, KR Evans, CE Stutz
Physical Review B 41 (14), 10272, 1990
Semiconductor quantum wells and superlattices for long-wavelength infrared detectors
MO Manasreh
Artech House on Demand, 1993
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy
J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ...
Nano letters 10 (4), 1512-1516, 2010
Temperature dependence of the band gap of colloidal core/shell nanocrystals embedded into an ultraviolet curable resin
A Joshi, KY Narsingi, MO Manasreh, EA Davis, BD Weaver
Applied physics letters 89 (13), 131907, 2006
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
MO Manasreh
Physical Review B 53 (24), 16425, 1996
Surface plasmon enhanced intermediate band based quantum dots solar cell
J Wu, SC Mangham, VR Reddy, MO Manasreh, BD Weaver
Solar energy materials and solar cells 102, 44-49, 2012
The EL2 defect in GaAs: some recent developments
MO Manasreh, DW Fischer, WC Mitchel
Physica Status Solidi B 154 (1), 11-41, 1989
Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy
J Wu, Z Li, D Shao, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo, ...
Applied Physics Letters 94 (17), 171102, 2009
Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure
MO Manasreh, F Szmulowicz, DW Fischer, KR Evans, CE Stutz
Applied physics letters 57 (17), 1790-1792, 1990
Origin of the blueshift in the intersubband infrared absorption in GaAs/Al 0.3 Ga 0.7 As multiple quantum wells
MO Manasreh, F Szmulowicz, T Vaughan, KR Evans, CE Stutz, ...
Physical Review B 43 (12), 9996, 1991
Intermediate-band material based on GaAs quantum rings for solar cells
J Wu, D Shao, Z Li, MO Manasreh, VP Kunets, ZM Wang, GJ Salamo
Applied Physics Letters 95 (7), 071908, 2009
Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells
I Lo, WC Mitchel, MO Manasreh, CE Stutz, KR Evans
Applied physics letters 60 (6), 751-753, 1992
Ion-beam-produced damage and its stability in AlN films
SO Kucheyev, JS Williams, J Zou, C Jagadish, M Pophristic, S Guo, ...
Journal of applied physics 92 (7), 3554-3558, 2002
Introduction to nanomaterials and devices
O Manasreh
John Wiley & Sons, 2011
III-nitride semiconductors: electrical, structural and defects properties
MO Manasreh
Elsevier, 2000
Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, MO Manasreh, DW Fischer, DN Talwar
Applied physics letters 57 (3), 294-296, 1990
Enhancement of GaAs solar cell performance by using a ZnO sol–gel anti-reflection coating
YF Makableh, R Vasan, JC Sarker, AI Nusir, S Seal, MO Manasreh
Solar Energy Materials and Solar Cells 123, 178-182, 2014
Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles
J Wu, S Lee, VR Reddy, MO Manasreh, BD Weaver, MK Yakes, ...
Materials Letters 65 (23-24), 3605-3608, 2011
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