Fanming Qu
Fanming Qu
Insitute of Physics, Chinese Academy of Sciences
Verified email at iphy.ac.cn
Title
Cited by
Cited by
Year
Gate-voltage control of chemical potential and weak antilocalization in Bi 2 Se 3
J Chen, HJ Qin, F Yang, J Liu, T Guan, FM Qu, GH Zhang, JR Shi, XC Xie, ...
Physical Review Letters 105 (17), 176602, 2010
6792010
A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al 2 O 3/SrTiO 3
YZ Chen, N Bovet, F Trier, DV Christensen, FM Qu, NH Andersen, ...
Nature communications 4 (1), 1-6, 2013
2912013
Edge-mode superconductivity in a two-dimensional topological insulator
VS Pribiag*, AJA Beukman*, F Qu*, MC Cassidy, C Charpentier, ...
Nature nanotechnology 10, 593, 2015
2082015
Strong superconducting proximity effect in Pb-Bi2Te3 hybrid structures
F Qu*, F Yang*, J Shen*, Y Ding, J Chen, Z Ji, G Liu, J Fan, X Jing, ...
Scientific reports 2, 2012
1512012
Edge transport in the trivial phase of InAs/GaSb
F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ...
New Journal of Physics 18 (8), 083005, 2016
1102016
Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
F Qu*, AJA Beukman*, S Nadj-Perge, M Wimmer, BM Nguyen, W Yi, ...
Physical Review Letters 115, 036803, 2015
972015
Proximity effect at superconducting Sn-Bi 2 Se 3 interface
F Yang, Y Ding, F Qu, J Shen, J Chen, Z Wei, Z Ji, G Liu, J Fan, C Yang, ...
Physical Review B 85 (10), 104508, 2012
732012
Spectroscopic evidence for bulk-band inversion and three-dimensional massive Dirac fermions in ZrTe5
ZG Chen, RY Chen, RD Zhong, J Schneeloch, C Zhang, Y Huang, F Qu, ...
Proceedings of the National Academy of Sciences 114 (5), 816-821, 2017
612017
Proximity-effect-induced superconducting phase in the topological insulator Bi 2 Se 3
F Yang, F Qu, J Shen, Y Ding, J Chen, Z Ji, G Liu, J Fan, C Yang, L Fu, ...
Physical Review B 86 (13), 134504, 2012
612012
Transport evidence of asymmetric spin–orbit coupling in few-layer superconducting 1 T d-MoTe 2
J Cui, P Li, J Zhou, WY He, X Huang, J Yi, J Fan, Z Ji, X Jing, F Qu, ...
Nature communications 10 (1), 1-8, 2019
492019
Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts
F Qu, J van Veen, FK de Vries, AJA Beukman, M Wimmer, W Yi, ...
Nano Letters 16, 7509–7513, 2016
452016
Giant Spin-Orbit Splitting in Inverted Double Quantum Wells
F Nichele, M Kjaergaard, HJ Suominen, R Skolasinski, M Wimmer, ...
Physical review letters 118 (1), 016801, 2017
422017
Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an Double Quantum Well Using Corbino Ring Geometry
BM Nguyen, AA Kiselev, R Noah, W Yi, F Qu, AJA Beukman, FK De Vries, ...
Physical review letters 117 (7), 077701, 2016
412016
Aharonov-Casher effect in Bi 2 Se 3 square-ring interferometers
F Qu, F Yang, J Chen, J Shen, Y Ding, J Lu, Y Song, H Yang, G Liu, J Fan, ...
Physical review letters 107 (1), 016802, 2011
362011
Spin-orbit interaction in a dual gated InAs/GaSb quantum well
AJA Beukman, FK De Vries, J Van Veen, R Skolasinski, M Wimmer, F Qu, ...
Physical Review B 96 (24), 241401, 2017
312017
Band Structure Perfection and Superconductivity in Type‐II Dirac Semimetal Ir1−xPtxTe2
F Fei, X Bo, P Wang, J Ying, J Li, K Chen, Q Dai, B Chen, Z Sun, M Zhang, ...
Advanced Materials 30 (35), 1801556, 2018
272018
Superconducting Quantum Interference through Trivial Edge States in InAs
FK De Vries, T Timmerman, VP Ostroukh, J Van Veen, AJA Beukman, ...
Physical review letters 120 (4), 047702, 2018
262018
Protected gap closing in Josephson trijunctions constructed on
G Yang, Z Lyu, J Wang, J Ying, X Zhang, J Shen, G Liu, J Fan, Z Ji, X Jing, ...
Physical Review B 100 (18), 180501, 2019
182019
Coexistence of bulk and surface shubnikov-de haas oscillations in Bi 2 Se 3
F Qu, C Zhang, RR Du, L Lu
Journal of Low Temperature Physics 170 (5), 397-402, 2013
172013
Phase Transition and Superconductivity Enhancement in Se‐Substituted MoTe2 Thin Films
P Li, J Cui, J Zhou, D Guo, Z Zhao, J Yi, J Fan, Z Ji, X Jing, F Qu, C Yang, ...
Advanced Materials 31 (48), 1904641, 2019
132019
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