Murugapandiyan P
Murugapandiyan P
Anil Neerukonda Institute of Technology & Sciences
Verified email at anits.edu.in
Title
Cited by
Cited by
Year
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
P Murugapandiyan, S Ravimaran, J William
AEU-International Journal of Electronics and Communications 77, 163-168, 2017
212017
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
P Murugapandiyan, S Ravimaran, J William, KM Sundaram
Superlattices and Microstructures 111, 1050-1057, 2017
202017
Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
P Murugapandiyan, S Ravimaran, J William
Journal of Science: Advanced Materials and Devices 2 (4), 515-522, 2017
122017
Switching transient analysis and characterization of an E-mode B-doped GaN-capped AlGaN DH-HEMT with a freewheeling Schottky barrier diode (SBD)
S Baskaran, A Mohanbabu, V Saminathan, P Murugapandiyan, ...
Journal of Electronic Materials 49 (7), 4091-4099, 2020
62020
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
P Murugapandiyan, A Mohanbabu, VR Lakshmi, VN Ramakrishnan, ...
Journal of Science: Advanced Materials and Devices 5 (2), 192-198, 2020
52020
DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
P Murugapandiyan, S Ravimaran, J William, J Ajayan, D Nirmal
Superlattices and Microstructures 109, 725-734, 2017
42017
30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications
P Murugapandiyan, S Ravimaran, J William
Journal of Semiconductors 38 (8), 084001, 2017
42017
DC and microwave characteristics of AlN spacer based Al0. 37Ga0. 63N/GaN HEMT on SiC substrates for high power RF applications
P Murugapandiyan, S Ravimaran, J William
Int. J. Nanoelectronics and Materials 10, 111-122, 2017
42017
Investigation of influence of SiN and SiO 2 passivation in gate field plate double heterojunction Al 0.3 Ga 0.7 N/GaN/Al 0.04 Ga 0.96 N high electron mobility transistors
P Murugapandiyan, D Nirmal, J Ajayan, A Varghese, N Ramkumar
Silicon, 1-9, 2021
32021
Design and development of cross dipole antenna for satellite applications
K Malaisamy, M Santhi, S Robinson, M Wasim, P Murugapandiyan
Frequenz 74 (7-8), 229-237, 2020
22020
Gan-based high-electron mobility transistors for high-power and high-frequency application: A review
P Murugapandiyan, VR Lakshmi, N Ramkumar, P Eswaran, M Wasim
Innovations in Electronics and Communication Engineering, p pp 339-348, 2020
22020
Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
P Murugapandiyan, A Mohanbabu, VR Lakshmi, M Wasim, KM Sundaram
Journal of Electronic Materials 49 (1), 524-529, 2020
22020
Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs
P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ...
International Journal of Electronics, 1-15, 2020
12020
Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications
MWKMS P. Murugapandiyan , V. Rajya Lakshmi
INTERNATIONAL JOURNAL OF ELECTRONICS LETTERS, 2019
1*2019
60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan, P Murugapandiyan
2021
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal, 105141, 2021
2021
DC Characteristics of AlN Spacer Based AlXGa(1 X)N/GaN HEMT for High Power Applications
VRV Murugapandiyan P, Rajya Lakshmi V, Ramkumar N
International Journal of Engineering and Advanced Technology (IJEAT) 8 …, 2019
2019
Design and Analysis of 20 nm T-Gate AlN/GaN HEMT with InGaN back-barrier for High power Microwave Applications
PB P.Murugapandiyan, Laxmikant D Bordekar , Shrinivas S Joshi
International Conference on Sustainable Growth through Universal Practices …, 2018
2018
Design of GaN-based high electron mobility transistors for future high power microwave applications
P Murugapandiyan
16th International Conference on Emerging Materials and Nanotechnology,March …, 2018
2018
Emerging Materials and Nanotechnology
P Murugapandiyan
2018
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Articles 1–20